Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductors and electronic devices generated therefrom

A technology for electronic devices and semiconductors, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., and can solve problems such as performance degradation, large cut-off current, etc.

Active Publication Date: 2007-10-10
XEROX CORP
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

TFTs fabricated from these materials typically exhibit large cut-off currents, very low current on / off ratios under ambient conditions, and their performance characteristics degrade rapidly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductors and electronic devices generated therefrom
  • Semiconductors and electronic devices generated therefrom
  • Semiconductors and electronic devices generated therefrom

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0067] A feature of the present disclosure is to provide p-type semiconductors of the general formula exemplified herein for use in microelectronic device applications, such as TFT devices.

[0068] Another feature of the present disclosure is to provide a p-type semiconductor of the general formula exemplified herein with a bandgap of about 1.5 eV to about 3 eV (as determined by the absorption spectra of its thin films).

[0069] In an additional feature of the present disclosure, p-type semiconductors of general formulas I and II exemplified herein are provided for use as microelectronic components, and the polymers are dissolved in conventional organic solvents such as dichloromethane, tetrahydrofuran, toluene , xylene, mesitylene, chlorobenzene, dichlorobenzene, trichlorobenzene, etc. have a solubility of, for example, at least about 0.1 wt% to about 95 wt%, and thus these polymers can be prepared by solution processes such as spin coating, screen printing , embossing, dip...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

An electronic device containing a polymer of Formula (I), Formula (II), or mixtures, or isomers thereof wherein each R 1 through R 10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R 1 and R 2 exclude halogen, nitro and cyano; a and b represent the number of rings; and n represents the number of repeating groups or moieties.

Description

[0001] Statement Regarding Federally Funded Research or Development [0002] This electronic device and certain components thereof were sponsored by United States Government Cooperative Agreement No. 70NANBOH3033 signed by the National Institute of Standards and Technology (NIST). The US Government has certain rights in the devices and certain semiconductor components illustrated below. technical field [0003] The present disclosure generally relates to semiconductors of the general formula exemplified herein and produced, for example, from monomers comprising two tertiary amines and two thieno groups which are primarily stabilizing, methods of preparation and their use. More specifically, the present disclosure relates, in embodiments, to novel polymers of the general formula exemplified herein and produced, for example, from monomers comprising mainly two tertiary amines for stabilization and in the monomer Two thieno groups per terminal, wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/12C07D409/10C08L65/00H01L51/05H01L51/30H01L51/00
CPCH01L51/0071C08G61/122C08G61/126C08G2261/3243C08G2261/344C08G2261/92H01L51/0036H01L51/006H01L51/0061H01L51/0541H01L51/0545C09B17/02C09B17/04H10K85/113H10K85/636H10K85/633H10K85/657H10K10/466H10K10/464Y02E10/549C08G61/00C08G61/12C07D471/00H01L23/29
Inventor Y·吴P·刘B·S·翁
Owner XEROX CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com