SOI compound covariant layer underlay with the metal Hafnium middle layer

Abstract

The SOI composite covariant substrate with metal-Hf thin intermediate layer comprises: from bottom to top, a common SOI variant substrate, including a supporting bottom Si (100) substrate, a decoupling SiO2 insulation layer on middle, and a top ultrathin Si monocrystal covariant layer for mismatch strain coordination; a hexahedral metal-Hf thin intermediate layer together with the Si monocrystal covariant layer forming a composite covariant layer; and a large-mismatch extension layer forming large lattice mismatch with the Si (100) substrate to form together with former two parts a large-mismatch heterostructure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an SOI compound variable layer substrate with a thin hexagonal metal hafnium intermediate layer. Background technique [0002] In addition to the advantages of good quality, large size, easy processing, low price, mature technology and integration, silicon (Si) substrates also have good electrical and thermal conductivity. The application prospects of mismatched heterostructure materials are more promising. Especially for those important wide-bandgap compound semiconductor materials such as zinc oxide (ZnO), gallium nitride (GaN) and aluminum nitride (AlN) that are difficult to obtain with large size, high quality, and low-cost bulk single crystals, it is especially important for Si substrates. High hopes were placed at the end. However, due to the large lattice mismatch and thermal expansion coefficient difference between Si and these materials, and the directly exposed...

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Problems solved by technology

Although there have been reports on the preparation of GaN materials grown with almost zero mismatch with hexagonal hafnium (α-Hf) bulk single crystal materials, it is possible to use these hexagonal refractory metal materials as intermediate layers to improve Si substrates. The research on large mismatch heterostructure materials ZnO, GaN and AlN prepared and grown on the substrate has not been reported yet.

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