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Electrode for generating plasma and plasma processing apparatus using same

A plasma and electrode technology, which is applied in the direction of plasma, circuit, discharge tube, etc., can solve the problems of no prompting, etc., and achieve the effects of not being easy to individual difference, suppressing the generation of dust, and uniform electrical conduction and heat conduction

Active Publication Date: 2012-02-08
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no suggestion on how to make the metal base and the conductor plate in a state of in-plane contact with uniform electrical conduction and thermal conduction

Method used

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  • Electrode for generating plasma and plasma processing apparatus using same
  • Electrode for generating plasma and plasma processing apparatus using same
  • Electrode for generating plasma and plasma processing apparatus using same

Examples

Experimental program
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Embodiment Construction

[0039]Next, embodiments of the present invention will be described. figure 1 It is a cross-sectional view showing an RIE (Reactive Ion Etching) plasma etching apparatus to which an electrode according to an embodiment of the present invention is applied as a plasma processing apparatus as an upper electrode. figure 1 2 in is a processing container (vacuum chamber) made of, for example, aluminum. The processing container 2 is an airtight structure composed of a small-diameter cylindrical upper portion 2a and a large-diameter cylindrical lower portion 2b. The processing container 2 is provided with a supporting stage 3 which horizontally supports a semiconductor wafer W (hereinafter referred to as a wafer) as a substrate to be processed and is a mounting table which functions as a lower electrode. The supporting stage 3 is made of, for example, aluminum, and is supported by a conductor supporting base 5 via an insulating plate 4 . In addition, on the outer periphery above th...

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PUM

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Abstract

The invention provides an electrode for plasma emergence. In the electrode for plasma emergence set opposed to a base plate and composed by matal base and conductor plate without broken danger of conductor plate, ensuring combination state with good uniformity between electric conduction of matal base and conductor plate and heat conduction in surface. The electrode is composed by following material: dipping metal such as Si in base metal formed by porous multiple ceramics such as silicon carbide, having metal base compound material of junction surface at least opposed to whole processed surface of the base plate; a conductor plate such as CVD-silicon carbide formed by resist plasma material melting connecting on junction surface of the metal base compound material via metal. In this condition, dipping metal in the base metal, melting connecting the conductor plate on the metal base compound material via the metal.

Description

technical field [0001] The present invention relates to an electrode for generating plasma facing a substrate subjected to plasma processing, and a plasma processing apparatus using the electrode. Background technique [0002] In the manufacturing process of semiconductors and liquid crystal devices, etc., plasma treatment using plasma is widely used, however, plasma treatment apparatuses for performing such plasma treatment are, for example, Figure 8 As shown, in the processing container 10 formed by the vacuum chamber, there are: a mounting table 11 for mounting a semiconductor wafer (hereinafter referred to as a wafer) W as a substrate, which is also used as a lower electrode; On the upper side, the shower head 12 has a plurality of gas supply holes 12a. The structure is as follows: an upper electrode 13 is provided on the lower surface of the shower head 12, and on one of the upper electrode 13 and the mounting table 11, for example, the mounting table 11, a high-freque...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/24H01L21/3065H01L21/311H01L21/3213C23C4/02C23C4/10H01L21/00
CPCH01J37/3255H01L21/67069
Inventor 林大辅
Owner TOKYO ELECTRON LTD
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