Interference light detection device and method for calibrating same

Abstract

The invention discloses an interference optical detection device and a method of calibrating the device. The invention is installed in a screen box of an upper electrode in an etching cavity, an adjustment knob is arranged on the exterior of the screen box, and an adjustment screw can be adjusted through the adjustment knob, thereby calibrating a probe head. When the probe head is adjusted every time, the screen box of the upper electrode is not required to be opened, the levelness of a probe head supporting frame can be adjusted through the adjustment knob on the exterior of the screen box ofthe upper electrode. Therefore, the calibration can be still realized in the plasmastate , namely, under the condition of impressing the voltage of the upper electrode and, to ensure the calibrationto be convenient, effective, and accurate.

Description

technical field [0001] The invention relates to a detection device and a calibration method thereof, in particular to an interference light detection device and a method for calibrating the device. Background technique [0002] In semiconductor silicon wafer processing technology, there are currently two endpoint detection methods for the etching process of 90nm-sized lines. One method is to measure the real-time etched thickness of the silicon wafer by an online interferometer (Interferometer), and calculate the thickness of the remaining silicon wafer, so as to control the time of the process. This method is IEP (Interferometric Endpoint: Interferometric Endpoint Detection Method ). Another method is OES (Optical Emission Spectroscopy, Optical Emission Spectroscopy Measurement Method), which utilizes changes in the intensity of the plasma emission spectrum during the detection process to perform endpoint detection. Usually in the etching process of 90nm or below, these t...

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Problems solved by technology

[0005] In this method, the shielding box 3 must be opened every time for calibration, so it is carried out under the condition of no plasma, but when the upper electrode 7 is added with radio frequency power, due to the temperature rise, the probe 4 will be distorted at a certain position Vibration and drift cause the position and direction of the actual probe 4 to deviate from the original vertical state, so the original calibration state is not the state with the strongest light intensity

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