Thin-film transistor structure and method of manufacture thereof

Abstract

The invention provides a structure of thin film transistor and making method thereof. The thin film transistor includes strip silicon island, grid, a first ion doping region and a second ion doping region. The strip silicon island has a thin film region with predetermined short edge and long edge, or has plural lateral grain boundaries approximately parallel to the short edgy. The grid is disposed on the strip silicon island and is approximately parallel to the lateral grain boundary. The first and second ion doping regions are respectively disposed at the two sides of the strip silicon island, approximately vertical to the grid, and serve as the source and drain of the thin film transistor.

Description

technical field [0001] The present invention relates to a structure of a thin film transistor, and in particular to an arrangement of a gate structure of the thin film transistor. Background technique [0002] Among the many technologies for manufacturing thin film transistors, there is a lateral crystal growth technology called heat retaining layer (heatretaining layer, HRL) assisted crystallization. figure 1 A cross-sectional schematic diagram of this technique. like figure 1 As shown, an amorphous silicon strip silicon island pattern 102 is formed on a substrate 100 , and then a thermal retention layer 104 is formed thereon. Next, a laser annealing (laserannealing) process is used to process the amorphous silicon strip silicon island layer to melt and induce super lateral crystal growth of crystalline silicon. This method utilizes the characteristic that the thermal stagnation layer partially absorbs a specific laser spectrum. After the thermal stagnation layer absorbs...

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Problems solved by technology

However, expensive photolithography masks and complicated process steps will inevitably increase the cost of the process

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