Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fall carrier capture structure organic LED and manufacturing method thereof

A technology of light-emitting diodes and carriers, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices, etc., can solve problems such as the reduction of device efficiency, and achieve the effects of high brightness, high efficiency, and good spectral color purity.

Inactive Publication Date: 2009-03-25
中科应化(长春)科技有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the single dye-doped device still has the problem of exciton quenching caused by the capture of excess carriers on the light-emitting molecules in the process of carrier capture, which leads to the problem of device efficiency reduction at high current densities.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fall carrier capture structure organic LED and manufacturing method thereof
  • Fall carrier capture structure organic LED and manufacturing method thereof
  • Fall carrier capture structure organic LED and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] In a vacuum of 1 to 5 x 10 -4 In Papa's coating equipment, the hole transport layer NPB, the dye C545T and DMQA double-doped light emitting layer, the electron transport layer Alq 3 , buffer layer LiF and metal Al are vapor-deposited on the ITO of the glass substrate, and the structure is prepared as ITO / NPB / Alq 3 : C545T: DMQA / Alq 3 / LiF / Al organic light-emitting diodes. Light-emitting layer Alq 3 : C545T: The weight ratio of DMQA is controlled at 1:2%:1%, the thickness of NPB is 50nm, the doped light-emitting layer is 30nm, the electron transport layer Alq 3 20nm for LiF, 1nm for LiF, and 200nm for Al. The obtained device is driven by a DC voltage to obtain DMQA luminescence with a main peak at 535nm and a half-peak width of 30nm. The maximum current efficiency is 16.0cd / A, the maximum power efficiency is 11.01m / W, and the maximum brightness is 60000cd / m 2 . The efficiency and brightness of double-doped devices are higher than those of single-doped 1% DMQA (see ...

Embodiment 2

[0027] In a vacuum of 1 to 5 x 10 -4 In Papa’s coating equipment, the hole transport layer NPB, the dyes DCJTI and DCJTB double-doped light-emitting layer, the electron transport layer Alq 3 , buffer layer LiF and metal Al are vapor-deposited on the ITO of the glass substrate, and the structure is prepared as ITO / NPB / Alq 3 :DCJTI:DCJTB / Alq 3 / LiF / Al organic light-emitting diodes. Light-emitting layer Alq 3 : The weight ratio of DCJTI:DCJTB is controlled at 1:1%:1%, the thickness of NPB is 50nm, the doped light-emitting layer is 30nm, Alq 320nm for LiF, 1nm for LiF, and 200nm for Al. The obtained device is driven by a DC voltage to obtain red light with a main peak at 625nm and a half-peak width of 74nm, a maximum current efficiency of 5.0cd / A, and a maximum brightness of 10,000cd / m 2 . The efficiency and brightness of double-doped devices are higher than those of single-doped 1% DCJTB, and the color purity of red light is better than that of single-doped.

Embodiment 3

[0029] In a vacuum of 1 to 5 x 10 -4 In Papa's coating equipment, the hole transport layer NPB, the dye C545T and DCJTI double-doped light emitting layer, the electron transport layer Alq 3 , buffer layer LiF and metal Al are vapor-deposited on the ITO of the glass substrate, and the structure is prepared as ITO / NPB / Alq 3 : C545T: DCJTI / Alq 3 / LiF / Al organic light-emitting diodes. Light-emitting layer Alq 3 :C545T:DCJTI weight ratio is controlled at 1:0.5%:2%, NPB thickness is 50nm, doped light-emitting layer is 30nm, Alq 3 20nm for LiF, 1nm for LiF, and 200nm for Al. The obtained device is driven by DC voltage, and the red light emission of DCJTI can be obtained, the maximum power efficiency is 9.4lm / W, the maximum current efficiency is 11.2cd / A, and the maximum brightness is 29500cd / m 2 , the main peak of luminescence is 615nm. The efficiency and brightness of double-doped devices are higher than those of single-doped 2% DCJTI, and the color purity of red light is bett...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Two different organic fluorescent dyes are selected as doping materials to be adulterate into 8-aluminum hydroxy quinoline. Their weight percent is as 0.2%-5%:0.2-5%:1. Alq3 / LiF / Al organic light emitting device is prepared with ITO / NPB doping layer. Carrier capture process is existed between organic fluorescent dyes and between each fluorescent dye and material of main body. Electroluminescence capability of organic LED is improved by using capture principle of waterfall carrier. Organic LED prepared by using the disclosed method possesses features of high efficiency, large brightness and good spectral color purity.

Description

technical field [0001] The invention relates to an organic light-emitting diode with a waterfall carrier trapping structure and a manufacturing method thereof. Background technique [0002] Doping is currently one of the most effective methods to improve the luminous efficiency and stability of OLEDs. In 1997, people such as C.W.Tang published on Applied Physics Letters that N,N-dimethylquinacridine (DMQA) was doped in 8-hydroxyquinoline aluminum (Alq 3 ) as the light-emitting layer, the prepared device is at 1400cd / m 2 In 2002, Aziz et al. published on Applied Physics Letters that 5, 6, 11, 12-tetraphenyl-naphthalene (Rubrene) was doped in the hole transport layer N , N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine (NPB), the lifetime of the device was improved by nearly an order of magnitude . However, this single-dye doping, especially the single-dye doping of the light-emitting layer, easily changes the color purity of the emission spectrum, and double-dy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56H01L33/00H01L51/30H01L51/40
Inventor 马东阁陈江山周全国方俊锋
Owner 中科应化(长春)科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com