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Mfg method of fall carrier capture structure organic LED

A light-emitting diode, organic technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as poor luminous efficiency, and achieve the effects of high brightness, good spectral color purity, and high efficiency

Inactive Publication Date: 2005-03-30
中科应化(长春)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The working mechanism of this dual-dye-doped organic light-emitting diode is mainly based on waterfall energy transfer, and its luminous efficiency is poor.

Method used

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  • Mfg method of fall carrier capture structure organic LED
  • Mfg method of fall carrier capture structure organic LED
  • Mfg method of fall carrier capture structure organic LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] In a vacuum of 1-5 x 10 -4 In Papa's coating equipment, the hole transport layer NPB, the dye C545T and DMQA double-doped light emitting layer, the electron transport layer Alq 3 , buffer layer LiF and metal Al are vapor-deposited on the ITO of the glass substrate, and the structure is prepared as ITO / NPB / Alq 3 :C545T:DMQA / Alq 3 / LiF / Al organic light-emitting diodes. Light-emitting layer Alq 3 : The weight ratio of C545T: DMQA is controlled at 1: 2%: 1%, the thickness of NPB is 50nm, the doped light-emitting layer is 30nm, and the electron transport layer Alq 3 20nm for LiF, 1nm for LiF, and 200nm for Al. The obtained device is driven by a DC voltage, and the DMQA luminescence with a main peak at 535nm and a half-peak width of 30nm is obtained, the maximum current efficiency is 16.0cd / A, the maximum power efficiency is 11.0lm / W, and the maximum brightness is 60000cd / m 2 . The efficiency and brightness of double-doped devices are higher than those of single-doped 1...

Embodiment 2

[0027] In a vacuum of 1-5 x 10 -4 In Papa’s coating equipment, the hole transport layer NPB, the dyes DCJTI and DCJTB double-doped light-emitting layer, the electron transport layer Alq 3 , buffer layer LiF and metal Al are vapor-deposited on the ITO of the glass substrate, and the structure is prepared as ITO / NPB / Alq 3 :DCJTI:DCJTB / Alq 3 / LiF / Al organic light-emitting diodes. Light-emitting layer Alq 3 : The weight ratio of DCJTI:DCJTB is controlled at 1:1%:1%, the thickness of NPB is 50nm, the doped light-emitting layer is 30nm, Alq 3 20nm for LiF, 1nm for LiF, and 200nm for Al. The obtained device is driven by a DC voltage to obtain red light with a main peak at 625nm and a half-peak width of 74nm, a maximum current efficiency of 5.0cd / A, and a maximum brightness of 10,000cd / m 2 . The efficiency and brightness of double-doped devices are higher than those of single-doped 1% DCJTB, and the color purity of red light is better than that of single-doped.

Embodiment 3

[0029] In a vacuum of 1-5 x 10 -4 In Papa's coating equipment, the hole transport layer NPB, the dye C545T and DCJTI double-doped light emitting layer, the electron transport layer Alq 3 , buffer layer LiF and metal Al are vapor-deposited on the ITO of the glass substrate, and the structure is prepared as ITO / NPB / Alq 3 :C545T:DCJTI / Alq 3 / LiF / Al organic light-emitting diodes. Light-emitting layer Alq 3 : The weight ratio of C545T: DCJTI is controlled at 1: 0.5%: 2%, the thickness of NPB is 50nm, the doped light-emitting layer is 30nm, Alq 3 20nm for LiF, 1nm for LiF, and 200nm for Al. The obtained device is driven by DC voltage, and the red light emission of DCJTI can be obtained, the maximum power efficiency is 9.4lm / W, the maximum current efficiency is 11.2cd / A, and the maximum brightness is 29500cd / m 2 , the main peak of luminescence is 615nm. The efficiency and brightness of double-doped devices are higher than those of single-doped 2% DCJTI, and the color purity of ...

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Abstract

Two different organic fluorescent dyes are selected as doping materials to be adulterate into 8-aluminum hydroxy quinoline. Their weight percent is as 0.2%-5%:0.2-5%:1. Alq3 / LiF / Al organic light emitting device is prepared with ITO / NPB doping layer. Carrier capture process is existed between organic fluorescent dyes and between each fluorescent dye and material of main body. Electroluminescence capability of organic LED is improved by using capture principle of waterfall carrier. Organic LED prepared by using the disclosed method possesses features of high efficiency, large brightness and good spectral color purity.

Description

technical field [0001] The invention relates to a method for manufacturing an organic light-emitting diode with a waterfall carrier trapping structure. Background technique [0002] Doping is currently one of the most effective methods to improve the luminous efficiency and stability of OLEDs. In 1997, people such as C.W.Tang published on Applied Physics Letters that N, N-dimethylquinacridine (DMQA) was doped in 8-hydroxyquinoline aluminum (Alq 3 ) as the light-emitting layer, the prepared device is at 1400cd / m 2 In 2002, Aziz et al. published on Applied Physics Letters that 5,6,11,12-tetraphenyl-naphthalene (Rubrene) was doped in the hole transport layer N , N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-diphenyl-4,4'-diamine (NPB), the lifetime of the device was improved by nearly an order of magnitude . However, this single-dye doping, especially the single-dye doping of the light-emitting layer, easily changes the color purity of the emission spectrum, and double-dye doping c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L51/30H01L51/40
Inventor 马东阁陈江山周全国方俊锋
Owner 中科应化(长春)科技有限公司
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