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Method for focus plasma beam mending with precisivelly positioning

A focused ion beam and precise positioning technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of easy damage to other circuits around and difficult alignment of integrated circuit target positions, etc. Easy to remove, easy to take out the effect

Inactive Publication Date: 2008-12-24
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the disadvantages that the target position of the integrated circuit is difficult to align in the traditional method, and the process of digging from the sample surface to the target metal layer is easy to damage other circuits around, the present invention is proposed

Method used

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  • Method for focus plasma beam mending with precisivelly positioning
  • Method for focus plasma beam mending with precisivelly positioning
  • Method for focus plasma beam mending with precisivelly positioning

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Embodiment Construction

[0022] In order to better understand the process of the present invention, the present invention will be further described below in conjunction with examples, but these examples do not limit the present invention.

[0023] The sample to be processed has a 6-layer metal structure, and the target metal layer is the third layer of metal. The appearance and structure of the sample are shown in Figures 1 to 3.

[0024] First use reactive ion etching (RIE) to etch the passivation layer deposited on the target metal layer to about 0.5 μm, and the pictures obtained by observing with an electron microscope are shown in Figure 4 and Figure 5, where the oval area is the target area, The block indicated by the arrow is the target point;

[0025] Apply a layer of transparent insulating paint on the surface of the test sample. The paint used is a mixture of paraffin wax and rosin at a ratio of 2:1, and the proportion of paraffin wax can be 40% to 90% [w / w] to make the paint uniform. Coat i...

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Abstract

The invention provides a method for accurately positioning the repair position of the focused ion beam. The target area is mainly positioned through an optical transmission microscope and a laser mark. The optical transmission microscope can directly display the underlying circuit structure through the passivation layer, while the traditional method The focused ion beam imaging used in the present invention can only display the outermost layer of the sample, so the method of the present invention can more accurately locate the focused ion beam repair position. In addition, the laser energy used for marking on the paint is relatively low in the present invention, and the sample material will not be damaged. Moreover, the paint used can be easily washed off with chemical reagents, such as acetone, and can be applied repeatedly without affecting the subsequent steps.

Description

technical field [0001] The invention relates to a method for repairing circuits in integrated circuits in a semiconductor manufacturing process, in particular to a method for precise positioning when repairing circuits with focused ion beams. Background technique [0002] Usually, after the design of an integrated circuit is completed, before mass production, it will be taped out in small batches to see whether the design can meet the expected requirements after actual production (sometimes, the results simulated by the design software are no problem, not equal to the actual There is no problem after production). If it can't be achieved, some corresponding modifications will be made to the design circuit, and then re-striped. But because every tape-out basically needs to re-engrav a set of masks, both in terms of cost and time, it is costly, so sometimes, the designer will choose to use the focused ion beam (FIB) to do some circuit repairs Actions. That is, through precis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/68H01L21/66
Inventor 张启华江秀霞季春葵李冠华
Owner SEMICON MFG INT (SHANGHAI) CORP
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