Solid organometallic compound-filled container and filling method thereof

Abstract

Provided is a new packing container that can stably supply a solid organometallic compound to a vapor-phase epitaxial growth system, such as the MOCVD system etc., at a constant concentration for a long period. The packing container for solid organometallic compound has a carrier gas inlet (2) and a carrier gas outlet (3). The inside of the packing container is divided into a plurality of vertical spaces and a carrier gas introduced through the carrier gas inlet (2) is discharged from the carrier gas outlet (3) after flowing through each vertical space.

Description

technical field [0001] The present invention relates to a container for filling a solid organometallic compound and a method for filling the same. More specifically, it relates to a solid organic material that can be used as a material for vapor phase epitaxial growth, such as a metalorganic chemical vapor deposition (Metalorganic Chemical Vapor Deposition, hereinafter referred to as "MOCVD") method used in the manufacture of materials for the electronic industry such as compound semiconductors. The metal compound is stably supplied at a certain concentration for a long time to the filling container of the vapor phase epitaxial growth device and the filling method of the solid organometallic compound. Background technique [0002] Organometallic compounds are widely used as raw materials in the manufacture of materials for the electronics industry. [0003] As a method for producing materials for the electronics industry using organometallic compounds, vapor phase epitaxial...

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Problems solved by technology

[0005] At this time, when the organometallic compound is solid at the temperature used for the above-mentioned supply, in the filling volume A, a flow path through which the carrier gas and the solid organometallic compound pass without sufficient contact is formed in the solid organometallic compound. It is difficult to uniformly maintain the contact state of the carrier gas and the solid organometallic compound, and there is a problem that it is difficult to stably supply the solid organometallic compound from the filling container to the MOCVD device with the carrier gas at a constant concentration for a long time

When the amount of the solid organometallic compound filled in the filling container A is increased in the supply of the solid organometallic compound used in the method using the above-mentioned carrier gas, the amount of the solid organometallic compound that can be stably supplied to the MOCVD apparatus The proportion of the solid organometallic compound is reduced relative to the amount of the filled solid organometallic compound. As a result, the remaining amount of the solid organometallic compound in the filled container increases, and there is a problem that the solid organometallic compound cannot be used effectively.

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