Layer member forming method

Abstract

A vapor reaction method including the steps of providing a pair of first and second electrodes within a reaction chamber where the pair of electrodes are arranged substantially parallel with each other. The method further includes the steps of placing a substrate in the reaction chamber where the substrate is held by said first electrode so that a first surface of the substrate faces toward the second electrode. A first film forming gas is introduced into the reaction chamber through the second electrode. The first film forming gas is excited to form a first insulating film by vapor deposition. The first insulating film may be silicon nitride. The method may also include the step of introducing a second film forming gas into the reaction chamber through the second electrode to ultimately form a second film. After removing the substrate from the reaction chamber, a cleaning gas may then be introduced through the second electrode to remove unnecessary layers from the inside of the reaction chamber.

Description

[0001]This application is a DIV of Ser. No. 08 / 659,636 Jun. 6, 1996 ABN which is a DIV of Ser. No. 08 / 351,140 Nov. 30, 1994 U.S. Pat. No. 5,650,013 which is a CON of Ser. No. 08 / 064,212 May 12, 1993 ABN which is a DIV of Ser. No. 07 / 842,758 Feb. 28, 1992 ABN which is a CON of Ser. No. 07 / 595,762 Oct. 3, 1990 ABN which is a CON of Ser. No. 07 / 312,420 Feb. 21, 1989 ABN which is a CON of Ser. No. 07 / 092,130 Sep. 2, 1987 ABN which is a DIV of Ser. No. 06 / 801,768 Nov. 26, 1985 ABN.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a layer member forming method which is suitable for use in the fabrication of various electronic devices of the type having an insulating, protecting, conductive, semiconductor or like layer member formed on a substrate member.[0004]2. Description of the Prior Art[0005]Heretofore there has proposed a method for forming such a layer member on a substrate member through use of a photo CVD or plasma CVD process.[0006]A...

AI Technical Summary

Benefits of technology

[0016]According to such a method of the present invention, since the first layer is deposited by the photo CVD technique on the substrate, even if the substrate surface is uneven, the first layer can be deposited in close contact with the substrate surface and with substantially no damage thereon. Accordingly, the first layer does not substantially contain the material forming the substrate surface, or the substrate surface does not substantially contain the material forming the first layer. Further, the deposition of the first layer is not accompanied by provision of an undesirable interface level between the first layer and the substrate and the application of internal stresses to the first layer and the substrate. In addition, since the second layer is deposited by the plasma CVD technique on the first layer, the second layer can easily be formed to a desired thickness in a short time.

[0017]In accordance with an aspect of the present invention, by forming the first and second layers as insulating, protecting or conductive layers of the same or different types or compositions, the layer member as a insulating, protecting or conductive layer member of desired characteristics can easily be deposited to desired thickness in a short time without inflicting damage on the substrate surface.

[0018]In accordance with another aspect of the present invention, by forming the first and second layers as semiconductive layers of the same type or composition, the layer member as a semiconductor layer member can easily be deposited to a desired thickness in a short time without inflicting damage to the substrate surface.

[0019]In accordance with another aspect of the present invention, by forming the first and second layers as semiconductor layers of different types or compositions, the layer member can easily be deposited as a semiconductor layer member composed of a first semiconductor layer which may preferably be relatively thin and a second semiconductor layer which may preferably be relatively thick, in a short time without causing damage to the substrate surface.

[0020]In accordance with another aspect of the present invention, by forming the first and second layers as an insulating layers and as a conductive or semiconductor layer, respectively, the layer member as a composite layer member can easily be deposited including a conductive or semiconductor layer formed to a desired thickness on the insulating layer of the least possible thickness, in a short time without impairing the substrate surface.

[0021]In accordance with yet another aspect of the present invention, by forming the first and second layers as a conductive or semiconductor layer and as an insulating or protecting layer, respectively, the layer member as a composite layer member can easily be deposited including an insulating or protecting layer formed to a desired thickness on the conductive or semiconductive layer of the least possible thickness, in a short time without impairing the substrate surface.

Problems solved by technology

Further, the deposition of the first layer is not accompanied by provision of an undesirable interface level between the first layer and the substrate and the application of internal stresses to the first layer and the substrate.

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