Supporting glass substrate, laminate, semiconductor package, electronic device, and method of manufacturing semiconductor package

a technology of supporting glass substrate and semiconductor package, which is applied in the direction of manufacturing tools, lapping machines, other domestic articles, etc., can solve the problems of difficult to increase the number of pins, high-density mounting of semiconductor chips, and strict mounting space for semiconductor chips to be used in those electronic devices, so as to reduce the variation of total thickness, the processing substrate is supported more accurately, and the effect of strong and accurate suppor

Inactive Publication Date: 2018-08-09
NIPPON ELECTRIC GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention proposes the use of a glass substrate as a supporting substrate for processing substrates. By using a polished surface with a total thickness variation of less than 5.0 μm, the glass substrate provides strong and accurate support for the processed substrate. The glass substrate also facilitates easy fixation and separation of the processed substrate and the supporting glass substrate through the formation of an adhesive or peeling layer. Additionally, the smooth surface and stiffness of the glass substrate facilitate easy handling and positioning of the processed substrate during processing. Overall, the use of a glass substrate as a supporting substrate enhances the accuracy and efficiency of processing treatments.

Problems solved by technology

Along with this, a mounting space for semiconductor chips to be used in those electronic devices is strictly limited, and there is a problem of high-density mounting of the semiconductor chips.
However, the related-art WLP has problems in that it is difficult to increase the number of pins, and chipping and the like of semiconductor chips are liable to occur because the semiconductor chips are mounted in a state in which the back surfaces thereof are exposed.

Method used

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  • Supporting glass substrate, laminate, semiconductor package, electronic device, and method of manufacturing semiconductor package
  • Supporting glass substrate, laminate, semiconductor package, electronic device, and method of manufacturing semiconductor package
  • Supporting glass substrate, laminate, semiconductor package, electronic device, and method of manufacturing semiconductor package

Examples

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example 1

[0061]Now, the present invention is described with reference to Examples. However, Examples below are merely examples, and the present invention is by no means limited thereto.

[0062]Glass raw materials were blended so as to comprise as a glass composition, in terms of mass %, 65.7% of SiO2, 22% of Al2O3, 3.7% of Li2O, 0.3% of Na2O, 0.3% of K2O, 0.7% of MgO, 1% of BaO, 2% of TiO2, 2.7% of ZrO2, 1.4% of P2O5, and 0.2% of SnO2. After that, the resultant was loaded into a glass melting furnace to be melted at from 1,500° C. to 1,600° C. Then, the molten glass was supplied into a roll-out forming device so as to be formed to a thickness of 0.7 mm. Finally, the resultant was subjected to boring to be formed into a substantially disc shape. The obtained glass substrate was measured for an average thermal expansion coefficient within a temperature range of from 30° C. to 380° C. As a result, the average thermal expansion coefficient was 44×10−7 / ° C. Each of the obtained glass substrates (se...

example 2

[0065]First, glass raw materials were blended so as to have a glass composition of each of Sample Nos. 1 to 7 shown in Table 3. After that, the resultant was loaded into a glass melting furnace to be melted at from 1,500° C. to 1,600° C. Then, the molten glass was supplied into an overflow down-draw forming device so as to be formed to a thickness of 0.8 mm. Each obtained glass substrate was evaluated for an average thermal expansion coefficient α30-380 within a temperature range of from 30° C. to 380° C., a density ρ, a strain point Ps, an annealing point Ta, a softening point Ts, a temperature at a viscosity at high temperature of 104.0 dPa·s, a temperature at a viscosity at high temperature of 103.0 dPa·s, a temperature at a viscosity at high temperature of 102.5 dPa·s, a temperature at a viscosity at high temperature of 102.0 dPa·s, a liquidus temperature TL, and a Young's modulus E. Each glass substrate after forming was measured for a total thickness variation and a warpage le...

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Abstract

Devised are a supporting substrate capable of contributing to an increase in density of a semiconductor package and a laminate using the supporting substrate. A supporting glass substrate of the present invention includes a polished surface on a surface thereof and has a total thickness variation of less than 2.0 μm.

Description

TECHNICAL FIELD[0001]The present invention relates to a supporting glass substrate and a laminate using the supporting glass substrate, and more specifically, to a supporting glass substrate to be used for supporting a processed substrate in a manufacturing process for a semiconductor package and a laminate using the supporting glass substrate.BACKGROUND ART[0002]Portable electronic devices, e.g., a cellular phone, a notebook-size personal computer, and a personal data assistance (PDA), are required to be downsized and reduced in weight. Along with this, a mounting space for semiconductor chips to be used in those electronic devices is strictly limited, and there is a problem of high-density mounting of the semiconductor chips. In view of this, in recent years, there has been an attempt to perform high-density mounting of a semiconductor package by a three-dimensional mounting technology, that is, by laminating semiconductor chips on top of another and connecting the semiconductor c...

Claims

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Application Information

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IPC IPC(8): H01L23/15C03C19/00H01L23/00H01L21/56B24B37/07
CPCH01L23/15C03C19/00H01L24/19H01L21/56B24B37/07H01L2224/12105H01L2224/04105H01L21/568H01L24/96H01L2924/3511B32B17/06C03C3/091C03C3/093B32B2307/538B32B2457/14H01L21/561C03B17/064B24B37/08H01L23/12H01L2224/18H01L2224/96Y02P40/57
Inventor KATAYAMA, HIROKI
Owner NIPPON ELECTRIC GLASS CO LTD
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