Substrate processing apparatus and substrate processing method

Abstract

In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.

Description

TECHNICAL FIELD[0001]The present invention relates to a substrate processing apparatus and a substrate processing method.BACKGROUND ART[0002]In a process of manufacturing a semiconductor substrate (hereinafter, referred to simply as a “substrate”), conventionally, various processings are performed on a substrate by using a substrate processing apparatus. Japanese Patent Application Laid-Open No. 2004-158588 (Document 1), for example, discloses a substrate processing apparatus capable of removing organic substances deposited on a substrate by using a removal liquid. In the substrate processing apparatus, by supplying temperature-controlled nitrogen gas onto a back surface of the substrate from a back-surface side gas nozzle before supplying the removal liquid onto the substrate from a removal liquid nozzle, a temperature of the substrate becomes close to that of the removal liquid. It is thereby possible to make the temperature of the removal liquid flowing on a surface of the substr...

AI Technical Summary

Benefits of technology

This patent describes a substrate processing apparatus that allows for uniform processing on both sides of a substrate. The apparatus includes an annular supporting part, a lower surface facing part, a rotating mechanism, two processing liquid supply parts, and at least one gas ejection nozzle. The apparatus can process the lower surface of the substrate while heating it with gas and can even prevent the flow of processing liquid into the gas ejection nozzle. Additionally, the apparatus includes a sealed space for holding the substrate, and a control part for controlling the supply and exhaust of gas in the sealed space. The apparatus can also include a top plate to perform more uniform processing on the upper surface of the substrate. Overall, this substrate processing apparatus allows for efficient and uniform processing on both sides of a substrate.

Problems solved by technology

Therefore, there is a limitation in suppressing the vaporization of the chemical liquid by reducing the exhaust.

Actually, since there occurs a decrease in the temperature especially at an outer edge portion of the substrate, it is impossible to improve the uniformity of the processing using the chemical liquid.

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