Methods of manufacturing the gallium nitride based semiconductor devices

Abstract

Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION[0001]This application claims the benefit of Korean Patent Application No. 10-2010-0089917, filed on Sep. 14, 2010, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND[0002]1. Field[0003]The present disclosure relates to semiconductor devices and methods of manufacturing the same, and more particularly, to gallium nitride based semiconductor devices and methods of manufacturing the same.[0004]2. Description of the Related Art[0005]Recently, along with rapid developments in information and communication technologies, technologies for high-speed and massive-capacity signal transmission are being rapidly developed. In this regard, with an increasing demand for personal mobile phones, satellite communications, military radars, broadcasting communications, and communication relay devices, there has been an increasing request for high-speed and high-power electronic ...

AI Technical Summary

Benefits of technology

[0008]Example embodiments of the present invention provide gallium nitride based semiconductor devices, which have an excellent heat dissipation characteristic and are advantageous in terms of improving a voltage withstanding characteristic.

Problems solved by technology

However, since a GaN-based semiconductor device generally employs a sapphire substrate having relatively low thermal conductivity, a GaN-based semiconductor device does not have an excellent heat dissipation characteristic.

Although a SiC substrate may be used instead of a sapphire substrate for an improved heat dissipation characteristic, a SiC substrate is relatively expensive (about 10 times more expensive than a sapphire substrate), and thus the overall cost for manufacturing a GaN-based semiconductor device increases.

Furthermore, in the case of using a GaN-based semiconductor device as a power device, there are various problems which are related to a voltage withstanding characteristic, manufacturing processes, etc.

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