Destruction of data stored in phase change memory
Inactive Publication Date: 2012-02-16
WEBB GARY EDWARD
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Benefits of technology
[0022]A self-destruct Tamper Responsive mechanism that destroys the stored state of a PCM memory element by applying intentional heat to the PCM element for a very short period, effectively making the device completely unreadable in an extremely short and finite period of time.
[0030]Because a battery is required, this approach has several detriments: increased physical weight and size, poor shock resistance, increased production cost, restriction of the environmental range of the memory to the range of the battery, reduced operational service life of the memory to the service life of the battery.
Problems solved by technology
A self-destruct Tamper Responsive mechanism that destroys the stored state of a PCM memory element by applying intentional heat to the PCM element for a very short period, effectively making the device completely unreadable in an extremely short and finite period of time.
Such an application of heat results in the PCM material becoming amorphorous in an uncontrollable manner thus losing any stored patterns.
Method used
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PREFERRED EMBODIMENT
[0041]FIG. 3 shows the preferred embodiment where the thermal heating element is integrated into the Phase Change Memory (PCM) device.
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Abstract
A mechanism and means by which the data information pattern stored in Phase Change Memory PCM (21) can be quickly destroyed and made unreadable upon the receipt of a destruction stimuli(11) by the application of a targeted thermal heat source generated by an internal integrated thermal heater (26), a heat source mounted under the PCM (28), on top of the PCM (29), within the PCB (30), or an externally generated heat source (27). Such an operation is non-destructive and while the stored data is rendered unreadable, the physical PCM device is unharmed and can be used again.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of PPA Ser. No. 61 / 374,080 filed 2010 Aug 16 by the present inventor.FEDERALLY SPONSERED RESEARCH[0002]None.SEQUENCE LISTING[0003]None.BACKGROUND[0004]1. Field of invention[0005]This invention relates to memories, particularly relating to Phase Change Memory (PCM), and generally to methods, methods of fabrication, and apparatus for destroying data patterns stored in such memory[0006]This invention applies to both PCM memories and systems using such memories and any memory device or system that exhibits the thermal characteristics of PCM memories where the stored state is lost as a result of a thermal event.[0007]2. Background of invention[0008]Phase Change Memory (PCM) is a type of non-volatile memory typically used in computers and other electronic devices. It is use is starting to become more widespread as a replacement for other Flash memory technologies.[0009]PCM memory is based on the properties of...
Claims
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IPC IPC(8): G11C11/00
CPCG11C7/04G11C13/0004G11C13/0059G11C13/0097G11C16/22
Inventor WEBB, GARY EDWARD
Owner WEBB GARY EDWARD
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