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Zno whisker films and method of manufacturing same

a technology of zno whisker and aqueous solution, which is applied in the field of zno whisker film, can solve the problems of no literature on the immobilization of zno whisker on fto substrate and the formation of oriented zno whisker films by aqueous solution processes, and achieves high specific surface area, high conductivity, and high specific surface area

Inactive Publication Date: 2008-12-04
NAT INST OF ADVANCED IND SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0008]In light of these circumstances and the above-indicated prior art, the inventors have conducted repeated and intensive investigations with the express intention of developing a whisker film-forming method that can be used to form ZnO whisker films having a high specific surface area and a high conductivity, and of developing such ZnO whisker film products. As a result, the inventors have discovered that it is possible by using a solution process to produce a ZnO whisker film that is a nanostructure endowed with both a high specific surface area and a high electrical conductivity. It is therefore an object of the present invention to provide a ZnO whisker film produced by a solution process, which film is a nanostructure having both a high specific surface area and a high electrical conductivity. Another object of the invention is to provide a method of manufacturing such a film.

Problems solved by technology

However, the literature contains no reports on the immobilization of ZnO whiskers on FTO substrate and the formation of oriented ZnO whisker films by aqueous solution processes.

Method used

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  • Zno whisker films and method of manufacturing same
  • Zno whisker films and method of manufacturing same

Examples

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example

[0058]In the example described below, a ZnO whisker film was manufactured by using a ZnO seed layer.

(1) Method of Manufacturing ZnO Seed Layer

[0059]Zinc acetate (zinc acetate dihydrate (Zn(CH3COO)2.2H2O, 99%)) was dissolved in anhydrous ethanol. The zinc acetate concentration was 0.01 M (mol / L).

[0060]The zinc acetate solution was spin-coated or dip-coated onto a washed FTO substrate, then washed with anhydrous ethanol and air-dried at 60° C. for 10 minutes. When dip-coating was used, this coating process was repeated four times. Next, atmospheric heating was carried out at 350° C. for 20 minutes, thereby forming a ZnO crystal seed layer.

(2) Method of Manufacturing ZnO Whisker Film

[0061]First, 200 ml of a mixed aqueous solution of 0.025 M zinc nitrate (zinc nitrate hexahydrate (Zn(NO3)2.6H2O, 99%), 0.025 M hexamethylenetetramine (HMT, C6H12N4, 99%) and 0.005 M polyethyleneimine (PEI, (C2H5N)n, branched mean molecular weight of 600, 99%) was prepared.

[0062]A beaker containing the reac...

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Abstract

The present invention is a ZnO whisker film, a manufacturing method thereof and an electronic device material composed of such a ZnO whisker film, the film is composed of primarily (at least 50 mol %) of ZnO crystals, and of accumulated whisker-like particles having an aspect ratio of 2 or more, and the film has a nanostructure with both a high specific surface area and a high electrical conductivity, the film can be manufactured by adjusting one or more solution condition selected from starting material concentration, temperature and pH so as to induce the deposition of ZnO crystals, in a reaction solution system for depositing zinc oxide, and forming thereby a ZnO whisker film on a substrate.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a ZnO whisker film and to a method of manufacturing such film. More particularly, the invention relates to a film which is composed primarily (at least 50 mol %) of ZnO crystals and is formed by the accumulation of whisker-like particles having an aspect ratio of 2 or more, and to a method of manufacturing such film. As used herein, the term ‘whisker-like particles’ refers to anisotropic particles which have an aspect ratio of 2 or more and are shaped as whiskers, needles, bars or rods. The ‘aspect ratio’ of a particle refers herein to the length-to-diameter (length / diameter) ratio of the particle. The aspect ratio of spherical particles and cubic particles is 1, whereas the aspect ratio of particles in the shape of needles, bars or whiskers is 1 or more. The present invention provides a ZnO whisker film that is useful as an electronic device for molecular sensors, gas sensors, solution ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L31/00B32B3/30B05D5/00B01J19/00
CPCC23C18/1216C23C18/1233C23C18/1245H01G9/204H01M14/005Y02E10/542Y02P70/50Y10T428/23979
Inventor HU, XIULANMASUDA, YOSHITAKEKATO, KAZUMI
Owner NAT INST OF ADVANCED IND SCI & TECH
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