Method for etching metal layer of display panel

A display panel and metal layer technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increased process cost and large etching amount, and achieve the effect of improving chamfering

Active Publication Date: 2007-05-30
AU OPTRONICS CORP
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0025] The object of the present invention is to provide a method for etching the metal layer of the display panel, to solve the problem of excessive lateral etching and etching amount encountered when etching the metal layer in a wet etching manner, and the problems mentioned in the above-mentioned known technologies Other issues such as increased process costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for etching metal layer of display panel
  • Method for etching metal layer of display panel
  • Method for etching metal layer of display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] 3A to 3C are top views of the process flow of the etching method of the metal layer of the display panel according to an embodiment of the present invention. First, please refer to FIG. 3A , a substrate 200 is provided, and the substrate 200 is divided into several panel display areas 210 , a test component area 220 and a component-free area 230 .

[0062] In this embodiment, based on the area of ​​the substrate 200, the area of ​​several panel display areas 210 accounts for 81% of the area of ​​the substrate 200, the test component area 220 accounts for 12% of the area of ​​the substrate 200, and the non-component area 230 accounts for 81% of the area of ​​the substrate 200. 7% of the area of ​​the substrate 200 . The proportions of the regions in FIG. 3A are not the actual proportions on the substrate 200 , but are only used to represent the relative positions of the regions.

[0063] In this embodiment, the number of panel display areas 210 is 6 as an example, but i...

Embodiment 2

[0071]In this embodiment, the display panel used is substantially the same as that of the above embodiments, please refer to FIG. 3 , and details will not be repeated here. The biggest difference between this embodiment and the previous embodiments is that the design of the etching mask 250 is changed to increase the total exposed area of ​​the metal layer 240 . As described below, if the total exposure ratio in this example is increased to (81%×80%)+(12%×80%)+(7%×80%)=80%, more aluminum can be exposed Metal. After performing the above etching process, the lateral etching rate of aluminum can be reduced to 25% to 60%, and the ratio of the maximum lateral etching amount to the minimum etching amount is further reduced to about 0.5 to 0.75. Under such a total exposure ratio, the chamfering phenomenon or the uneven lateral etching can be minimized, and the profile of the metal layer 240 will also be greatly improved.

[0072] Certainly, after performing the above metal layer et...

Embodiment 3

[0077] In another embodiment of the present invention, the design of the etching mask 250 is also used to increase the total exposure ratio of the metal layer 240 on the large-size panel to 72%. The etch rate is reduced by 10% to 30%, and the ratio of maximum lateral etch amount to minimum etch amount is reduced to 0.75 to 0.9. A good effect of improving the profile of the metal layer 240 can also be obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an etching method of metal layer of display panel, which comprises the following parts: base with at least one display panel area, detecting component area and non-component area, a layer of metal on the base to cover the display panel area, detecting component area and non-component area, etching mask on the meal layer to expose partial metal layer, wherein the area of exposing part of etching mask is between 70% and 80% corresponding to the area of metal layer; the wetting etching technique is exerted to remove exposed metal layer.

Description

technical field [0001] The invention relates to an etching method, in particular to an etching method for a metal layer of a display panel. Background technique [0002] The display has become an important human-machine communication device. Users can read information through the display and then control the operation of the device. Among them, the liquid crystal display is the focus of development. Generally speaking, a liquid crystal display is mainly composed of a thin film transistor array substrate, a color filter substrate and a liquid crystal layer between the two substrates. Among them, the thin film transistor (Thin Film Transistor, TFT) is mainly used to control the data writing of the liquid crystal display, which mainly includes components such as a gate, a channel layer, and a source / drain. . [0003] FIG. 1 is a schematic cross-sectional view of one thin film transistor of a conventional thin film transistor array substrate. Please refer to FIG. 1 , the thin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23F1/02H01L21/467
Inventor 詹勋昌卢艺沈益民陈怡君
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap