Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device

一种半导体、器件的技术，应用在有效抑制软误差的半导体器件布局领域，能够解决无法电路应用等问题，达到最小化总布局面积、防止反转、增加节点电容的效果

Inactive Publication Date: 2007-03-14
NEC ELECTRONICS CORP
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem in that it is impossible to apply this circuit to a circuit that operates all the time such as a ring oscillator circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0040] FIG. 1 shows an oscillator circuit (for example, a ring oscillator circuit) according to a first embodiment of the present invention. As shown in FIG. 1, the ring oscillator circuit includes an odd number of logic circuits (eg, inverter circuits) connected in series. For example, the ring oscillator circuit of this embodiment is formed on a silicon semiconductor substrate. FIG. 2 shows the layout of two of the inverter circuits making up the ring oscillator circuit.

[0041]Referring to FIG. 2, the layout of the first embodiment will be described in detail. As shown in FIG. 2, each inverter circuit has two field effect transistors (eg, a PMOS transistor and an NMOS transistor). The inverter circuits are connected in series to operate as a ring oscillator circuit. In the following description, a direction from left to right in FIG. 2 is referred to as an X direction, and an upward direction in FIG. 2 is referred to as a Y direction. The description focuses on an inve...

no. 2 example

[0054] Fig. 3 shows the layout of an inverter circuit according to a second embodiment of the present invention. The layout of the inverter circuit of the second embodiment differs from that of the inverter circuit of the first embodiment in that a well potential diffusion layer region well (N-type diffusion layer) is added between the two inverter circuits. layer) and the substrate potential diffusion layer region sub (P-type diffusion layer). The same reference numerals are assigned to the same layout parts as those of the first embodiment, and descriptions thereof are omitted here.

[0055] The layout of the inverter circuit of the second embodiment is as follows. The inverter circuit of the second embodiment has a well potential diffusion layer region well and a substrate potential diffusion layer region sub provided between two adjacent inverter circuits. The well potential diffusion layer region well is connected to the power supply voltage VCC, and is formed between t...

no. 3 example

[0059] FIG. 4 shows the layout of an inverter circuit according to a third embodiment of the present invention. The layout of the inverter circuit of the third embodiment is different from that of the second embodiment in that the number of source regions and drain regions of each transistor is increased. The same reference numerals are assigned to the same layout parts as those of the first embodiment, and descriptions thereof are omitted here.

[0060] The layout of the inverter circuit of the third embodiment is described in detail below. The layout of the inverter circuit of the third embodiment is substantially the same as that of the inverter circuit of the first embodiment. The following description focuses on differences between the first embodiment and the third embodiment.

[0061] The gate G of this embodiment extends in the Y direction and has a rectangular shape. Each transistor pair (NMOS transistor and PMOS transistor) has 4 gates G, and these 4 gates G are c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device according to an embodiment of the invention includes: a plurality of field effect transistors; and a plurality of logic circuits composed of the field effect transistors, the field effect transistors each including: first and second drain regions formed away from each other; at least one source region formed between the first and second drain regions; and a plurality of gate electrodes formed between the first drain region and the source region and between the second drain region and the source region.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a layout of a semiconductor device that effectively suppresses soft errors. Background technique [0002] In recent years, along with miniaturization in the semiconductor process of semiconductor devices composed of field-effect transistors such as MOSFETs, transient errors (soft error ) has become a recognized problem. As an example of a soft error, there is SEU (single-click inversion), where the charge caused by radiation causes the charge accumulated at the node to decrease, causing a logic inversion to occur. In general, the occurrence of SEU depends on the trade-off between the amount of charge accumulated at the information storage node (node ​​voltage * node capacitance) and the amount of charge accumulated to the information storage node from the charge generated in the substrate by radiation (collected charge amount) . The amount of charge collected is gener...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/092H01L29/772H01L29/423
CPCH01L27/092H01L27/1104H01L27/0207H10B10/12
Inventor 古田博伺高桥弘行
Owner NEC ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com