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Growth system of crystal by resistance heating vertical multi-crucible descent method

A technology of resistance heating and crystal growth, applied in crystal growth, single crystal growth, self-solidification, etc., can solve the problems of high price, lack of design, and limited application of artificial single crystals

Inactive Publication Date: 2007-02-28
JIAXING UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The existing invention patent "Preparation method for growing lead tungstate scintillation large single crystal by crucible descending method" (application number 94114075.X) also involves the descending method growth furnace for growing 2, 4 or 8 crystals at the same time, which may be considered When more crystals grow, the temperature field deviates far from the traditional circular radial symmetric temperature field. The inventor did not design more or odd crystal growth systems, which limits the application of this growth system in batch growth.
[0003] The inventor of the patent "Preparation method for growing lead tungstate scintillation large single crystal by crucible drop method" made an attempt to use the growth system to grow multiple crystals at the same time. This crystal growth system can only grow a small number of crystals at a time. Increasing crystal production can only be carried out by repeatedly using multiple growth furnaces. In the mass production of crystals, the efficiency is low and the cost is too high. This is also an important reason why the price of artificial single crystals is relatively high compared with the same type of glass and ceramics.

Method used

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  • Growth system of crystal by resistance heating vertical multi-crucible descent method
  • Growth system of crystal by resistance heating vertical multi-crucible descent method

Examples

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Embodiment 1

[0014] Embodiment 1: This embodiment is a multi-crucible descending growth system capable of simultaneously growing 20 crystals with a size of 30×30×230 mm. The lead tungstate crystal is a tetragonal structure crystal, and the crystal shape is a cuboid when growing along the main crystal directions such as [100], [010] and [001], which is suitable for crystal growth in this system. According to the physical and chemical performance parameters of the lead tungstate crystal, the second section of the longitudinal temperature curve of the growth point of the crystal is about 1210°C, and the lead-down rate is 1.0mm / h. The system temperature sensor adopts the S-type temperature sensor 14. This system uses 10 crucible devices 19, and one crucible device 19 grows one lead tungstate crystal of 30×30×470 mm at a time. According to the size requirements of the finished product, such a crystal can be cut into two, so 20 crystals can be obtained at a time. crystals.

[0015] The furnace...

Embodiment 2Yb2

[0017] Example 2Yb 2 o 3 Doped lead tungstate crystal vertical multi-crucible growth system

[0018] This embodiment is a 23×23×260mm Yb that can grow 10 at the same time 2 o 3 In the multi-crucible descending method growth system doped with lead tungstate scintillation crystals, the physical and chemical performance parameters of the grown crystals are basically the same as those in Example 1. The placement of the temperature sensors 14 is the same as in Embodiment 1, and 40 S-type temperature sensors 14 are used for temperature control. This system uses five crucibles 22, and one crucible 22 grows one 30×30×470mm Yb at a time 2 o 3 Doped lead tungstate crystals, according to the size requirements of the finished product, such a crystal can be cut into two, so 10 crystals can be obtained at a time.

Embodiment 3Bi2

[0019] Example 3Bi 2 o 3 Doped lead tungstate crystal vertical multi-crucible growth system

[0020] This embodiment is a 23×23×260mmRi that can grow 10 roots at the same time 2 o 3 In the multi-crucible descending method growth system doped with lead tungstate scintillation crystals, the physical and chemical performance parameters of the grown crystals are basically the same as those in Example 2. This system uses five crucibles 22, and one crucible 22 grows one 30×30×470mm Bi at a time. 2 o 3 Doped lead tungstate crystals, according to the size requirements of the finished product, such a crystal can be cut into two, so 10 crystals can be obtained at a time.

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Abstract

The invention relates the crystal growth device with vertical crucible descent method. The device comprises crystal furnace, crucible, crucible table and controlling temperature unit. Crystal furnace comprises outer shell, insulating cotton, insulating brick, flame retardant coating, root brick, I-shaped brick and bracing frame. Flame retardant coating is near high-temperature region of furnace, and root brick is at the bottom of the furnace. The device can grow many crystals at the same time.

Description

technical field [0001] The invention relates to a crystal growth device, in particular to a crystal growth device using a vertical multi-crucible descending method. Background technique [0002] The existing invention patent "Preparation method for growing lead tungstate scintillation large single crystal by crucible descending method" (application number 94114075.X) also involves the descending method growth furnace for growing 2, 4 or 8 crystals at the same time, which may be considered When more crystals are grown, the temperature field deviates far from the traditional circular radial symmetric temperature field, and the inventors did not design the growth system for more or odd crystals, which limits the application of this growth system in batch growth. [0003] The inventor of the patent "Preparation method for growing lead tungstate scintillation large single crystal by crucible drop method" made an attempt to use the growth system to grow m...

Claims

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Application Information

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IPC IPC(8): C30B11/00
Inventor 万尤宝黄国松张建新
Owner JIAXING UNIV
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