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MEMS millimeter phase-shifter of low-exciting-voltage and precisie control

A technology of excitation voltage and precise control, applied in the field of phase shifters, can solve the problems of low phase precision and high excitation voltage, and achieve the effect of high phase shift control precision, low excitation voltage, and conducive to popularization and application.

Inactive Publication Date: 2006-10-25
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the problems of high excitation voltage and low phase accuracy in the existing MEMS phase shifter, the present invention provides a method that not only has good electrical characteristics such as wide frequency band and low loss, but also further reduces the excitation voltage and improves the phase control accuracy. MEMS millimeter wave phase shifter with low excitation voltage and precise control of phase shift characteristics at low cost and small size

Method used

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  • MEMS millimeter phase-shifter of low-exciting-voltage and precisie control
  • MEMS millimeter phase-shifter of low-exciting-voltage and precisie control
  • MEMS millimeter phase-shifter of low-exciting-voltage and precisie control

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specific Embodiment approach 1

[0010] Specific implementation mode 1: This implementation mode is a MEMS millimeter wave phase shifter with low excitation voltage and precise control of phase shift characteristics, refer to Figure 2 ~ Figure 6 , it includes a bottom substrate 1, on which a signal line 2 and a ground line 3 are arranged at intervals, and it also includes a metal bridge 4 spanning directly above the signal line 2, and the ground line 3 is fixed with an inductance above 10nH The inductance coil 8 is provided with an insulating layer 7 between the inductance coil 8 and the ground wire 3, the inductance coil 8 is connected to one end of the metal spring 6, and the other end of the metal spring 6 is connected to the metal bridge 4 and carries out the metal bridge 4 support, the upper surface of the signal line 2 below the metal bridge 4 is provided with a dielectric constant ε r For: 2≤ε r ≤20 dielectric substrate 5.

[0011] This embodiment requires the inductance of the inductance coil 8 to ...

specific Embodiment approach 2

[0013] Embodiment 2: The difference from Embodiment 1 is that the dielectric substrate 5 selected in this embodiment is made of polyimide material, and the dielectric constant ε of polyimide is r =3.4, the thickness h of the dielectric substrate 5 1 It is 0.1 μm.

specific Embodiment approach 3

[0014] Specific embodiment three: the difference from specific embodiment one is that this embodiment selects quartz as the dielectric substrate, and the dielectric constant ε of quartz r =3.78, the thickness h of the dielectric substrate 5 1 is 5 μm.

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Abstract

This invention relates to a MEMS mm wave phase shifter with low excitation voltage and capable of controlling phase shift accurately, which fixes an inductance coil on the earth with the inductance volume over 10nH, in which, an insulation layer is set between the coil and the earth, said coil is connected with one end of the metal spring, the other end of the spring is connected with a metal bridge and supports it and a medium chip is set on the top surface of a signal line under the metal bridge.

Description

technical field [0001] The invention relates to a phase shifter. Background technique [0002] The phased scanning of the beam of the phased array antenna relies on a large number of phase shifters in the antenna array. In the phased array radar, the phased array antenna has thousands of units, and each unit needs a phase shifter. The phase of the phase shifter on each unit in the array can be adjusted between (0-2π). Adjusting the phase shifter in an electronically controlled manner can change the phase distribution on the antenna aperture and realize beam scanning in space. Therefore, the phase shifter is a key microwave component in the feed system. In the S, L and P band phased arrays, the high frequency digital phase shifters are mostly realized by PIN switching diodes, and the C, X and Ku bands are mostly realized by ferrite devices. But when it comes to the millimeter-wave frequency band, the above-mentioned implementation method is no longer applicable. When the f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/18B81B3/00H01Q3/36
Inventor 吴群金博识孟繁义贺训军傅佳辉
Owner HARBIN INST OF TECH
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