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Positive photoresist composition and resist pattern formation

A technology of photoresist and composition, which is applied in the field of positive photoresist composition and photoresist pattern formation, can solve the problems of slow developing speed and achieve the effect of improving developing speed

Active Publication Date: 2006-10-18
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, according to the inventors' studies of the present invention, although a positive photoresist composition comprising a photosensitive novolac resin is suitable for achieving perpendicularity and high sensitivity of a photoresist pattern in a thick film, said photosensitive novolak resin is Formed from an alkali-soluble novolak resin, wherein some of the hydrogen atoms of all phenolic hydroxyl groups in the alkali-soluble novolak resin are replaced by 1,2-naphthoquinonediazidesulfonyl groups, however, the composition The problem is that its developing speed is slow

Method used

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  • Positive photoresist composition and resist pattern formation
  • Positive photoresist composition and resist pattern formation
  • Positive photoresist composition and resist pattern formation

Examples

Experimental program
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Embodiment 1

[0151] The 2-heptanone solution of the photosensitive novolak resin (2) described above was concentrated, and the operation of adding propylene glycol methyl ether acetate and concentrating thereto was repeated 3 times to obtain 55% by weight of the novolak resin (2) Propylene glycol methyl ether acetate solution.

[0152]Next, to 100 parts by weight of the photosensitive novolak resin (2) (182 parts by weight of 55% by weight propylene glycol methyl ether acetate solution), propylene glycol methyl ether acetate was added to make the photosensitive novolak resin (2) The concentration of) can be changed to 42% by weight to produce a positive photoresist composition containing propylene glycol methyl ether acetate as a solvent.

Embodiment 2

[0154] By adding propylene glycol methyl ether acetate and ethyl lactate to 100 parts by weight of photosensitive novolak resin (2) (182 parts by weight of 55% by weight propylene glycol methyl ether acetate solution), the photosensitive novolak resin The concentration of the resin (2) can be changed to 42% by weight to produce a positive photoresist composition containing propylene glycol methyl ether acetate and ethyl lactate (weight ratio=70 / 30) as a solvent.

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Abstract

Provided is a means of improving the development speed of a positive photoresist composition containing a photosensitive novolak resin obtained by substituting 1,2-naphthoquinonediazidesulfonyl for all of the alkali-soluble novolak resin. formed from some of those hydrogen atoms of the phenolic hydroxyl group. The means is a positive photoresist composition and a method for forming a photoresist pattern using the composition, the composition comprising (A) a photosensitive novolak resin dissolved in (B) propylene glycol alkyl ether acetate, wherein some of those hydrogen atoms of all the phenolic hydroxyl groups of the alkali-soluble novolak resin are substituted with 1,2-naphthoquinonediazidesulfonyl groups.

Description

Technical field [0001] The invention relates to a positive photoresist composition and a method for forming a photoresist pattern. [0002] The priority of Japanese Patent Application No. 2003-325953 filed on September 18, 2003 is claimed, the content of which is incorporated herein by reference. Background technique [0003] In photolithography, a positive photoresist composition mainly comprising an alkali-soluble resin and a quinonediazide group-containing compound as a photosensitizer is conventionally used to manufacture semiconductor devices or liquid crystal elements. This positive photoresist composition has characteristics suitable for practical use in the manufacture of semiconductor devices or liquid crystal elements. However, in the manufacturing field of methods that require thick film, such as the block formation method of LCD drivers, the maximum wiring method of CSP (chip size / scale pack), and the method of forming magnetic coils of magnetic heads, it is necessary...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/023G03F7/004H01L21/027
CPCG03F7/023G03F7/0236G03F7/0048G03F7/0392
Inventor 增田靖男奥井俊树
Owner TOKYO OHKA KOGYO CO LTD
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