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Remover composition

A technology of composition and release agent, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor contact

Inactive Publication Date: 2006-06-14
KAO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The residues generated after the above etching or ashing may lead to adverse situations such as poor contact, so it is required that the residues can be peeled off at a high degree

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0095] The following examples further describe and disclose the solution of the present invention. These examples are merely illustrative of the present invention, and are not meant to limit the present invention in any way.

[0096] 1. Production of evaluation wafers

[0097] The unwashed and patterned wafer A (Al wiring) having aluminum (Al) wiring with a wiring width of 0.25 μm and the unwashed and patterned wafer A (Al wiring) formed with a via hole with a diameter of 0.25 μm having the following structure The patterned wafer B (via hole) was decomposed into a square of 1 cm square, and this was used as an evaluation wafer.

[0098] (Structure of patterned wafer A)

[0099] TiN / Al-Cu / TiN / SiO 2 / Base

[0100] (Structure of patterned wafer B)

[0101] SiO 2 (Insulating layer) / TiN (barrier layer) / Al-Cu (conductive layer) / TiN / substrate

[0102] In addition, the barrier layer of the via has been corroded.

[0103] 2. The formulation of the stripper composition

[0104] Each compon...

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PUM

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Abstract

The present invention provides a stripper composition for cleaning semiconductor substrates or semiconductor elements, wherein: (1) the stripper composition contains 65% by weight or more of water, (2) the stripper composition contains: ( 1) At least one selected from sugars, amino acid compounds, organic acid salts and inorganic acid salts, and ammonium fluorosilicate in a release agent composition with a content of 0.01 to 1% by weight; or (II) organic Phosphonic acids and fluorinated compounds. The release agent composition of this invention can be used suitably for manufacture of electronic components, such as a high-quality LCD, memory, CPU.

Description

Technical field [0001] The present invention relates to a stripper combination for stripping resist residues and metal oxidation products derived from metal wiring (hereinafter sometimes referred to as ashing residues collectively, resist residues and metal oxidation products derived from metal wiring) A method for manufacturing a semiconductor substrate or semiconductor element including a step of washing a semiconductor substrate or semiconductor element using the stripper composition, wherein the resist residue is left after the resist is removed by an ashing method, the The resist is used in the process of forming a semiconductor element on a semiconductor substrate such as a silicon wafer. Background technique [0002] In the process of manufacturing semiconductor elements on semiconductor substrates such as silicon wafers, a thin film is formed by a method such as sputtering, and then a predetermined pattern is formed on the thin film with resist using lithography. This can...

Claims

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Application Information

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IPC IPC(8): G03F7/42G03F7/26
Inventor 田村敦司
Owner KAO CORP
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