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Organometallic compounds suitable for use in vapor deposition processes

A metal compound, compound technology, applied in the field of organometallic compounds

Inactive Publication Date: 2006-05-10
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method does not attempt arsenic, a gaseous Group VA compound

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Deposition of undoped GaN layers is carried out in suitable cold-walled, vertical and thermally conductive MOCVD chambers operating at atmospheric pressure and dedicated to GaN deposition. A thin GaN layer with a thickness of 2 μm was deposited on a (0001) sapphire substrate with a thickness of 200 μm at 1050-1080° C. using standard MOCVD techniques. pre-passed in H 2 SO4 :H 3 PO 4 (3:1 ratio) desmutting and pickling chemical treatment of sapphire substrates in acid solution. The gallium source was trimethylgallium (TMG) mixed with a catalytic amount (0.5 mol % based on 1 mol of TMG) ​​of gallium trichloride as a catalyst compound. Ammonia was used as the nitrogen source. The carrier gas diluent, a 50:50 mixture of nitrogen and hydrogen, was used at a flow rate of about 1.5-3 liters / minute. The gallium / catalyst source was placed in a bubbler and used with hydrogen bubbled through the bubbler at a rate of 10-15 micromoles total gallium / minute. Ammonia was introduce...

Embodiment 2

[0042] According to the general procedure of Example 1, trimethylgallium (TMG) deliberately mixed with a catalytic amount of asymmetric dimethylhydrazine (0.25% mol per mol TMG) ​​was used as the gallium source, and the undoped GaN layer was prepared under the same conditions. deposition. The GaN layers thus obtained are expected to have a reduced defect density (approximately 10 8 / cm 2 ). The reaction chamber is expected to have significantly reduced deposition of polycrystalline, amorphous gallium containing deposits.

Embodiment 3

[0044] According to the general procedure of Example 1, using trimethylaluminum (TMA) intentionally mixed with a catalytic amount of tert-butylphosphine (0.75% mole per mole of TMA) as the aluminum source, the undoped AlN layer was grown under the same growth conditions deposition. The AlN layers thus obtained are expected to have a reduced defect density compared to AlN layers produced using conventional techniques. The reaction chamber is expected to have significantly reduced deposition of polycrystalline, amorphous aluminum containing deposits.

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PUM

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Abstract

A composition for use in the manufacture of compound semiconductors is provided. Also provided are methods for producing compound semiconductors using these compositions.

Description

technical field [0001] The present invention generally relates to the field of organometallic compounds. In particular, the present invention relates to organometallic compounds useful in the manufacture of compound semiconductors. Background technique [0002] In the vapor deposition of Group IIIA metal-containing films, trialkyl Group IIIA metal compounds are used as precursors. In the fabrication of III / V compound semiconductors such as gallium nitride (GaN) using metalorganic chemical vapor deposition ("MOCVD") techniques, trimethylgallium and ammonia (group V precursors) are transported in the gas phase into a high temperature deposition chamber, The compound decomposes and the GaN film is deposited on the substrate heated to a temperature as high as 1000°C or higher. Incorporating large amounts of ammonia in the membrane is inefficient to use with nitrogen since only a small amount of ammonia is consumed in this process. Ammonia is commonly used in the growth of Gro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F5/00
CPCC23C16/301C23C16/303C30B23/02C30B25/02C30B29/40C30B29/406C30B29/42Y10T428/12278C08J7/06C08J5/18C08K5/56
Inventor D·V·谢奈哈特哈特E·沃尔科
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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