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Copper sputtering targets and methods of forming copper sputtering targets

A technology of sputtering targets and semi-finished products, which can be used in sputtering coating, transportation and packaging, vacuum evaporation coating, etc., and can solve problems affecting the quality of sputtering films

Inactive Publication Date: 2005-10-12
HONEYWELL INT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, remaining defects can still affect the quality of sputtered films

Method used

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  • Copper sputtering targets and methods of forming copper sputtering targets
  • Copper sputtering targets and methods of forming copper sputtering targets
  • Copper sputtering targets and methods of forming copper sputtering targets

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] Embodiment 1: Manufacture high-purity copper monolithic sputtering target

[0085] A cast copper billet measuring 6 inches in diameter, 11 inches in length, and 6N pure was heated in an air furnace to a temperature of about 990°F and held for about 60 minutes. The billet is then hot forged to a final height reduction of 55-75%, immediately water quenched, using silica or graphite foil during the forging process. The ingot was then cold rolled for 16 passes, quenched after the initial 8 passes, for a total reduction of about 60 to about 80%. Cracking during cold rolling is prevented by performing the first 4 cold rolling passes with a reduction of about 5 to about 6% per pass. 13-16 passes were performed to produce a reduction of about 10 to about 11% per pass to obtain a small particle size. After cold rolling, the blank is recrystallized by heating to about 480°F for about 120 minutes. The semi-finished product is machined to make the final target. The resulting hi...

Embodiment 2

[0092] Embodiment 2: Manufacture copper alloy monolithic sputtering target

[0093] A billet of copper alloy having less than 10% Ag, Sn, Al or Ti is heated and maintained at a temperature of about 900 to about 1500°F for about 45 minutes. The billet is then hot forged to produce a final reduction of at least about 50%. Reheat some forging billets (depending on the alloy) for at least 10 minutes during forging. Immediately after final forging, the forged billet is water quenched. The ingot is cold rolled to a reduction of at least about 60% to form a semi-finished product which is recrystallized by heating to a temperature of from about 750 to about 1200°F for 120 minutes. The recrystallized blank is machined to form a monolithic target. Each target has an average particle size of about 15 to about 50 microns.

[0094] A specific target of a copper alloy with 0.3 atomic % Al was formed from a billet with a diameter of 6 inches and a length of 11 inches. Initially, the bil...

Embodiment 3

[0097] Example 3: Manufacture of Copper Alloy Diffusion Bonded Sputtering Target

[0098] A copper alloy billet was provided and processed as described in Example 2, except that it was cold rolled to a reduction of at least about 50%. The cold-rolled semi-finished product was joined to the CuCr support plate at a joining temperature of about 450° C. for about 120 minutes. Recrystallization of the alloy occurs during the joining process. The attached target has a particle size of less than about 30 microns and an attachment strength of up to about 30 ksi.

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Abstract

The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Description

technical field [0001] The present invention relates to copper-containing monolithic sputtering targets and copper-containing bonded sputtering targets. The invention also relates to methods of forming copper-containing monoliths and connecting sputter targets. Background of the invention [0002] Currently, high purity copper sputtering targets and copper alloy sputtering targets are used in many applications including, for example, integrated circuit fabrication. The quality of copper-containing structures such as interconnects and films depends on the sputtering performance of the target. Many factors of the sputtering target can affect the sputtering performance of the target, these factors include: the average particle size and uniformity of the particle size of the target; the crystallographic orientation / texture of the target; the uniformity of the structure and composition in the target and The strength of the target. Typically, a smaller average particle size cor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B21J5/00B21C23/01C22C9/01C22C9/02C22C9/04C22C9/05C22C9/06C22C9/10C22F1/00C22F1/08C23C14/34H01L21/285
CPCB21C23/01C22F1/08C23C14/3414B21C23/001Y10T428/12118C23C14/14C23C14/548
Inventor V·塞加尔易骛文S·费拉泽吴季哲S·D·斯特罗特尔斯F·A·阿尔福德W·B·维莱特
Owner HONEYWELL INT INC
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