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Window type probe, plasma monitoring device, and plasma processing device

A plasma and monitoring device technology, applied in the field of plasma processing devices, can solve the problems of simplicity, high cost, and influence of plasma characteristics

Inactive Publication Date: 2005-07-27
JAPAN SCI & TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, in the above-mentioned known methods, there are problems of influence on plasma characteristics, rapidity, and simplicity. In addition, the cost is large, and there is also a problem of requiring additional space for installing them.

Method used

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  • Window type probe, plasma monitoring device, and plasma processing device
  • Window type probe, plasma monitoring device, and plasma processing device
  • Window type probe, plasma monitoring device, and plasma processing device

Examples

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Embodiment Construction

[0046] Here, refer to Figure 2 to Figure 7 , the plasma processing apparatus and detection signal processing method of a windowed probe according to Embodiment 1 of the present invention will be described.

[0047] refer to figure 2

[0048] figure 2 It is a schematic configuration diagram of a plasma processing apparatus with a windowed probe according to Embodiment 1 of the present invention.

[0049] This plasma processing apparatus consists of a processing chamber 11 having a gas inlet 12, an exhaust port 13, and a probe mounting portion 14, and is arranged in the processing chamber so that a lower electrode 15 on which a silicon wafer 16 is placed and a shower head for injecting and introducing gas are also arranged. The upper electrode 17 is a parallel plate-shaped electrode facing each other, a high-frequency power supply 19 that applies 13.56 MHz RF power to the lower electrode 15 through a matching unit 18 that performs impedance matching with blocking capacitor...

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Abstract

This invention relates to a detection port type probe, a plasma monitoring device, and a plasma processing apparatus. It is intended to directly and conveniently detect a state of plasma generated by an application of a radio frequency or a high voltage, and the detection port type probe is provided with at least an electroconductive supporting member (5) having an opening formed on at least a part of a surface thereof facing to plasma and a dielectric member (1) having a probe electrode (2) formed on one side thereof positioned at the opening of the electroconductive supporting member (5).

Description

technical field [0001] The present invention relates to a window probe, a plasma monitoring device and a plasma processing device, in particular to a method for simply, rapidly and accurately detecting a plasma discharge generated by using high frequency or high voltage on a substrate to be processed. A window-type probe, a plasma monitoring device, and a plasma processing device are characteristic in the structure of plasma fluctuations in a plasma processing device. Background technique [0002] Currently, in the field of semiconductor manufacturing, a plasma processing method in which a substrate to be processed is treated with plasma discharge for the purpose of plasma CVD, ashing, etching, sputtering, or surface treatment is widely used. [0003] In the plasma processing process of implementing this plasma processing, when a high voltage or a high frequency voltage of a high frequency power supply is applied, the stability and reproducibility of the generated plasma may...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/00C23C14/34C23C16/52H01J37/32H01L21/205H01L21/3065
CPCH01J37/32935
Inventor 八坂三夫
Owner JAPAN SCI & TECH CORP
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