Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Heat treatment system and formable vertical chamber

A technology of processing chamber and processing area, applied in the system field of heat-treating objects, can solve problems such as high cost and time-consuming

Inactive Publication Date: 2005-07-20
AVIZA TECHNOLOGY INC
View PDF1 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Replacing lamps is also costly and time consuming, especially when a given lamp system has more than 180 lamps
Power requirements can also be costly, as the peak power draw of the lamp can reach around 250kw

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heat treatment system and formable vertical chamber
  • Heat treatment system and formable vertical chamber
  • Heat treatment system and formable vertical chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The present invention provides an apparatus and method for processing small quantities or batches of one or more workpieces, such as semiconductor substrates or wafers, carried on a carrier, such as a cassette or vaporizer, so that Reduce processing cycle time and improve processing uniformity.

[0046] As used herein, the term "small batch" refers to a number of wafers that are less than several hundred wafers in a typical batch system, preferably in the range of 1 to about 53 semiconductor wafers, or where 1 to 50 semiconductor wafers are finished wafers, while the rest are non-finished wafers used for monitoring purposes and as blanker wafers.

[0047] Heat treatment refers to the process of heating the workpiece or wafer to a desired temperature in the range of about 350°C to 1300°C. Thermal processing of semiconductor wafers may include thermal treatment, annealing, diffusion or driving of dopant materials, deposition or growth of layers of material (eg, chemical ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An apparatus (100) and method are provided for thermally processing substrates (108) held in a carrier (106). The apparatus (100) includes a vessel (101) having a top (134), side (136) and bottom (138), and a heat source (110) with heating elements (112-1, 112-2, 112-3) proximal thereto. The vessel (101) is sized to enclose a volume substantially no larger than necessary to accommodate the carrier (106), and to provide an isothermal process zone (128) extending throughout. In one embodiment, the bottom wall (138) includes a movable pedestal (140) with a bottom heating element therein (112-1), and the pedestal can be lowered and raised to insert the carrier (106) into the vessel (101). The apparatus (100) can include a movable shield (146) that is inserted between the pedestal (140) and the carrier (106) to shield the substrates (108) from the heating element (112-1) and to maintain pedestal temperature. A magnetically coupled repositioning system (162) repositions the carrier (106) during processing of the substrates (108) without use of a movable feedthrough into the volume enclosed by the vessel (101), and without moving the bottom heating element (112-1) in the pedestal (140).

Description

[0001] Cross References to Related Applications [0002] This application claims Serial No. 60 / 396536, filed July 15, 2002, entitled "Thermal Processing System," and Serial No. 60 / 396,536, filed November 22, 2002, entitled "Thermal Processing System and Method of Using the Same" Benefit and Priority of U.S. Provisional Patent Granted in Common Procedure, No. 60 / 428,526. Both patents are incorporated herein by reference in their entirety. technical field [0003] Generally, the present invention relates to systems and methods for thermally processing objects, such as substrates. More particularly, the present invention relates to apparatus and methods for thermally treating, annealing, and depositing or removing layers of material on or from semiconductor wafers or substrates. Background technique [0004] In the manufacture of integrated circuits (ICs) or semiconductor devices composed of semiconductor substrates or wafers, heat treatment devices are generally used. Therm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/22C23C16/44C23C16/455C23C16/46C23C16/54F27B5/14F27B5/18F27D11/02H01L21/00H01L21/02H01L21/205H01L21/324H01L21/677H05B3/00H05B3/06H05B3/66
CPCC23C16/46H01L21/67109C23C16/4409C23C16/4412H01L21/67775H01L21/67772C23C16/54C23C16/45578H01L21/67017C23C16/4401
Inventor 戴尔·R·杜博伊斯杰米·H·纳姆克雷格·威尔德曼邱泰庆杰弗里·M·科瓦尔斯基
Owner AVIZA TECHNOLOGY INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products