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Pressure-contactable power semiconductor module

A technology of power semiconductors and semiconductors, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as increased resistance and thermal resistance

Inactive Publication Date: 2005-01-05
ABB (SCHWEIZ) AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the total amount of pressure contacts in the power semiconductor module increases, thus increasing the overall electrical and thermal resistance

Method used

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  • Pressure-contactable power semiconductor module
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  • Pressure-contactable power semiconductor module

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Experimental program
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Embodiment Construction

[0019] FIG. 2 a schematically shows a section through a power semiconductor module section without the action of contact pressure in a first exemplary embodiment of the invention. The semiconductor device 3 is provided on the substrate 1 via the second main terminal 32 . The contact pressure piece 5 is located in the contact region on the first main terminal 31 of the semiconductor component 3 . In this way, the pressure stud 52 of the contact pressure piece 5 protrudes into the inner region 44 of the elastic element 4 . In this embodiment, the elastic element 4 is a coil spring. Thus, the inner region 44 is a substantially cylindrical region surrounded by coils of the coil spring. A deformable connection element 6 is connected to the end face 51 of the contact pressure piece 5 facing the cover plate 2 and contacts the cover plate 2 via a fixed integral connection piece 56 . The contact pressure piece 5 and the connecting element 6 form a current guide, the flexible part of...

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Abstract

Pressure contact power semiconductor module comprises: base (1) and cover (2) plates; a semiconductor module (3) with first (31) and second connections (32); and a spring (4) arranged between the first connection and the cover plate. The lower connection connects the semiconductor module to the base plate, while the electrical connection to be cover plate is made via a contact strut (5) that extends through the center of the spring.

Description

technical field [0001] The invention relates to the field of power electronics and to a pressure-contactable power semiconductor module according to the preamble of claim 1 . Background technique [0002] Such a power semiconductor module is described in laid-open patent DE 199 03 245 A1. The power semiconductor modules mentioned therein are of the so-called pressure contact type with at least one semiconductor device, such as figure 1 shown. The first main terminal 31 of the semiconductor component 3 is electrically conductively connected to the cover plate 2 via at least one contact element 8 . Also, the semiconductor device 3 is provided on the substrate 1 through the second main terminal 32 . [0003] To achieve a reliable contact in this power semiconductor module, 1 kN / cm is required 2 magnitude of pressure. In order to generate these pressures and at the same time compensate for variations in the thickness of the semiconductor components, especially in modules wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/34H01L23/48
CPCH01L2924/01032H01L24/72H01L2924/01082H01L2924/19043H01L2924/01004H01L2924/01068H01L2924/01019H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/01029H01L2924/01042H01L2924/01052H01L2924/01013H01L2924/01056
Inventor D·施奈德D·特吕泽尔
Owner ABB (SCHWEIZ) AG
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