Ionized PVD with sequential deposition and etching

Abstract

An iPVD apparatus (20) is programmed to deposit material (10) into high aspect ratio submicron features (11) on semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). The modes operate at different power and pressure parameters. Pressure of more than 50 mTorr, for example, is used for sputtering material from a target while pressure of less than a few mTorr, for example, is used to etch. Bias power on the substrate is an order of magnitude higher for etching, producing several hundred volt bias for etching, but only a few tens of volts for deposition. The alternating etching modes remove deposited material that overhangs edges of features on the substrate, removes some of the deposited material from the bottoms (15) of the features, and resputters the removed deposited material onto sidewalls (16) of the features. The substrate (21) is cooled during deposition and etching, and particularly during etching to substantially below 0 DEG C. RF energy is coupled into the chamber (30) to form a high density plasma, with substantially higher RF power coupled during deposition than during etching. The substrate (21) is moved closer to the plasma source during etching than during deposition.

Description

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AI Technical Summary

Benefits of technology

The technical effect of this patented technology relates to improving the efficiency and performance of various types of plasma display (PDP) manufacturing technologies by enabling rapid switch between different modes during production while maintaining optimal conditions for depositing materials onto specific areas on the surface being treated. It achieves these benefits with improved productivity rates due to faster switching times caused by higher current levels compared to previous methods like evaporation techniques. Additionally, it provides efficient sources and substrates for effective treatment of films formed over large surfaces.

Problems solved by technology

Technological Problem: Current methods for manufacturing small diameter (small width), conductivity type memory devices such as dynamic random access memories (RAMs) use very fine metal lines called tungsten plugging and diffusion barriers to ensure proper electrical conduction paths. These materials cause unwanted particles when transferred onto various parts of the chip causing defects like short circuits. Additionally, these techniques involve expensive equipment and complicated procedures involving multiple processing chambers.

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