Silicon carbide crystal growth apparatus

Abstract

The invention discloses a SiC crystal growing device, including vacuum chamber, graphite growing chamber, and induction coil, where the graphite chamber is coated with insulating material at a proper thickness, the induction coil is set outside the insulating material, they are all fixed in the vacuum chamber together, the vacuum chamber is set with an openable sealing cover and with a pumping hole for connecting with the vacuum pump. It eliminates the defect caused by the vacuum chamber wall interlaid between the induction coil and the crystal growing chamber, and can conveniently changes the size of the graphite growing chamger by adjusting the thickness of the heat preserving material to achieve the purpose of changing the size of the grown crystal; at the same time, can grow large-sized SiC crystal without a great change of equipment.

Description

technical field [0001] The invention relates to a device for manufacturing silicon carbide crystals, that is, a silicon carbide crystal growth device. Background technique [0002] Wide bandgap materials represented by SiC and GaN are the third-generation semiconductors after Si and GaAs. Compared with Si and GaAs, SiC has a wide bandgap (2.2~3.3eV, 2~3 times of Si), high thermal conductivity (3~3.3 times of Si), high breakdown field strength (4×10 6 V / cm, 10 times of Si), high saturation electron drift rate (2.5×10 7 cm / s, 2.5 times that of Si), chemical stability, high hardness and wear resistance, and high bonding energy. Therefore, SiC is especially suitable for the manufacture of electronic devices with high temperature, high frequency, high power, radiation resistance and corrosion resistance. SiC devices can be used in important fields such as artificial satellites, rockets, radar and communications, aerospace vehicles, marine exploration, earthquake prediction, oi...

AI Technical Summary

Problems solved by technology

But there are two disadvantages in this type of heating device: first, the size of the graphite growth chamber is not easy to change, which brings great difficulties when changing the size of the growing crystal, especially when increasing the crystal size

To increase the size of the graphite growth chamber, it is necessary to reduce the thickness of the insulation material, which will cause the temperature of the inner wall of the quartz tube to be too high, making the quartz tube soft or leaking

Second, when growing large-sized crystals, the size of the graphite growth chamber, quartz tube, and induction coil should be increased accordingly, and the wall thickness of the quartz tube should be increased accordingly, which will lead to a change in the coupling between the induction coil and the graphite growth chamber. Poor, the induction efficiency becomes low, making it difficult to generate the required growth temperature in the graphite growth chamber

Therefore, the growth device with this structure has a great limitation on the size of the grown crystal.

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