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Method for preparaing Al epitaxial layer contained semiconductor material grown on GaAs substrate

An epitaxial layer and semiconductor technology, used in semiconductor lasers, semiconductor/solid-state device manufacturing, laser parts and other directions, can solve problems such as increasing materials, increasing device costs, and weakening material concentrations, and achieves increased migration length, reduced severity, Defect reduction effect

Inactive Publication Date: 2004-10-13
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method also has some disadvantages: a low growth rate also means an increase in the probability of background impurity adsorption, so it will increase the background concentration of the material, and these high background concentrations will lead to weakening of the control of the material concentration and damage the device. have quite adverse effects; low growth rate will increase the growth time of the material and increase the cost of the device

Method used

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  • Method for preparaing Al epitaxial layer contained semiconductor material grown on GaAs substrate
  • Method for preparaing Al epitaxial layer contained semiconductor material grown on GaAs substrate
  • Method for preparaing Al epitaxial layer contained semiconductor material grown on GaAs substrate

Examples

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Embodiment 1

[0017] Embodiment 1: grow Al with conventional method 0.4 Ga 0.6 As / GaAs triple quantum well material

[0018] GaAs substrate at 1×10 -10 Under the background vacuum of Torr, the surface was heated to 580°C under the protection of As molecular beam to remove the surface oxide film, and then the GaAs growth rate was 500nm / hour, the Ga:As beam current ratio was 1:30, and the substrate temperature was 580°C. A 500nm thick GaAs buffer layer was grown at ℃.

[0019] At 610°C, with the above-mentioned As molecular beam, on the surface of the GaAs buffer layer with a GaAs growth rate of 500nm / hour, 833nm / hour of Al 0.4 Ga 0.6 As growth rate sequentially grows 100nm thick Al 0.4 Ga 0.6 As, 5nm thick GaAs, 50nm thick Al 0.4 Ga 0.6 As, 2.5nm thick GaAs, 50nm thick Al 0.4 Ga 0.6 As, 1.5nm thick GaAs, 100nm thick Al 0.4 Ga 0.6 As, finally covered with 3nm thick GaAs to prevent Al 0.4 Ga 0.6 The oxidation of As does not change the growth temperature and the flux of As atoms i...

Embodiment 2

[0020] Example 2: Growth of Al by interruption method 0.4 Ga 0.6 As / GaAs triple quantum well material

[0021] GaAs substrate at 1×10 -10 Under the background vacuum of Torr, the surface was heated to 580°C under the protection of As molecular beam to remove the surface oxide film, and then the GaAs growth rate was 500nm / hour, the Ga:As beam current ratio was 1:30, and the substrate temperature was 580°C. A 500nm thick GaAs buffer layer was grown at ℃.

[0022] At 610°C, with the above-mentioned As molecular beam, on the surface of the GaAs buffer layer with a GaAs growth rate of 500nm / hour, 833nm / hour of Al 0.4 Ga 0.6 As growth rate sequentially grows 100nm thick Al 0.4 Ga 0.6 As, interrupt for 30 seconds, re-grow 5nm thick GaAs, 50nm thick Al 0.4 Ga 0.6 As, stop for another 30 seconds, and then grow 2.5nm thick GaAs, 50nm thick Al 0.4 Ga 0.6 As, stop for another 30 seconds, and then grow 1.5nm thick GaAs, 100nm thick Al 0.4 Ga 0.6 As, finally covered with 3nm thi...

Embodiment 3

[0023] Example 3: growing Al-containing epitaxial layer on GaAs substrate by the method of the present invention to prepare semiconductor material by doping 1% In atom as surfactant to grow Al 0.4 Ga 0.6 As / GaAs triple quantum well material

[0024] GaAs substrate at 1×10 -10 Under the background vacuum of Torr, the surface was heated to 580°C under the protection of As molecular beam to remove the surface oxide film, and then the GaAs growth rate was 500nm / hour, the Ga:As beam current ratio was 1:30, and the substrate temperature was 580°C. A 500nm thick GaAs buffer layer was grown at ℃.

[0025] At 610°C, using the above-mentioned As molecular beam, and adding 1% In atoms to the molar number of As atoms as a surfactant, on the surface of the GaAs buffer layer, the GaAs growth rate is 500nm / hour, and the Al concentration of 833nm / hour 0.4 Ga 0.6 As growth rate sequentially grows 100nm thick Al 0.4 Ga 0.6 As, 5nm thick GaAs, 50nm thick Al 0.4 Ga 0.6 As, 2.5nm thick GaA...

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Abstract

The invention relates to a method to prepare a semiconductor material with an Al-containing epitaxial layer grown on a GaAa substrate, placing the GaAa substrate in vacuum to heat its surface to 580 deg.C by routine method under the protection of As molecular beams to eliminate the oxide film, then charging As:Ga beam current to grow a GaAs buffer layer, regrowing an Al-containing epitaxial layer on the GaAs buffer layer, and finally covering a GaAs cap layer so as to obtain the semiconductor material. The character of the semiconductor material: at 400-650 deg.C, adopt As molecular beams for protection, and at the time of regrowing a Al-containing epitaxial layer, add in In atoms as surface- active agent, where the mole number of In atom is 1-10% of that of Al atom. It can enhance the migratory length of other atoms on the epitaxial surface, thus achieving the purpose of improving the interface and body quality of multilayer epitaxial film.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor material, in particular to a method for preparing a semiconductor material containing an Al epitaxial layer grown on a GaAs substrate. Background technique [0002] AlGaAs / GaAs heterojunction has been widely used in electrical and optical devices such as high electron mobility transistors and quantum well lasers. For a quantum device, perfect crystal structures and atomically flat interfaces are essential. However, due to the strong activity of Al atoms, usually, their migration length on the epitaxial surface is very small, especially when the Al composition exceeds 0.3. Therefore, the AlGaAs material with high Al composition usually has more defects, and is easy to form islands during the growth process, resulting in poor interface quality. Therefore, the epitaxial growth of the usual Al-containing III-V compound semiconductors has high requirements on the growth conditions. For exampl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01S5/00
Inventor 周均铭陈弘王文冲贾海强尚勋忠黄绮
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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