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Orgain semiconductor electroluminous triode and its manufacturing method

An organic semiconductor and triode technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems with operating characteristics such as low switching speed, low carrier concentration and mobility, and difficult to large-area displays, etc. Achieving the effects of various preparation methods, good and stable electronics, and low material cost

Inactive Publication Date: 2004-10-06
DALIAN RAILWAY COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the organic thin film transistors researched by developed countries such as the United States, Japan, and Europe adopt the structure of organic semiconductor field effect transistors. However, due to the small carrier concentration and mobility of organic semiconductors, their operating characteristics such as low switching speed and low driving voltage Advanced but difficult to be practical, it is still difficult to be a practical electronic device
In the field of optoelectronic devices and flat panel displays, electroluminescent devices widely used at present are made of semiconductor materials. Inorganic semiconductor materials have high luminous efficiency, but they have disadvantages such as difficulty in making large-area displays and complicated manufacturing processes.

Method used

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  • Orgain semiconductor electroluminous triode and its manufacturing method
  • Orgain semiconductor electroluminous triode and its manufacturing method
  • Orgain semiconductor electroluminous triode and its manufacturing method

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Embodiment Construction

[0011] The specific implementation of the organic semiconductor electroluminescent triode and its manufacturing method described in the present invention is as attached figure 2 , attached image 3 As shown, its structure is composed of Schottky gate organic electrostatic induction triode and organic electroluminescence device: Schottky gate organic electrostatic induction triode is a two-layer semiconductor material copper phthalocyanine (CuPc) evaporation film 8 sandwiching aluminum grid The electrode sandwich structure, the gate is a comb-shaped aluminum evaporation film 9, one of the source and drain is a gold evaporation film 7 in ohmic contact with the copper phthalocyanine evaporation film 8, the other is a transparent electrode 1, and the organic light-emitting material is Aluminum quinoline (Alq 3 ). The luminescent material layer made of organic luminescent material quinoline aluminum is added between the electrode layer and the Schottky gate layer to form a stack...

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Abstract

An electroluminescent organic semiconductor transistor is made of organic semiconductor and metal material through vacuum evaporation. It is composed of organic electrostatic induction transistor and organic electroluminescent device. Said organic electrostatic induction transistor consists of a transparent electrode layer used as source or drain, a schokttky-type gate layer and a metal layer used as drain or source. Its advantages are low drive voltage, fine control of light intensity, and high speed and stability.

Description

Technical field [0001] The invention relates to an all-organic electroluminescent device compounded by an organic electrostatic induction triode and an organic electroluminescent device. Background technique [0002] Inorganic semiconductor electronic components represented by silicon have been micro-processed to sub-micron and deep-sub-micron levels, and the technical level of chips can reach the integration level which tends to the limit of physical processing; organic electronic components have large area, low cost, rich Its material selectivity and other advantages have been developed and researched for decades. At present, the organic thin film triode researched by developed countries such as the United States, Japan, and Europe adopts the organic semiconductor field effect transistor structure, but due to the small carrier concentration and mobility of the organic semiconductor, its working characteristics such as low switching speed and low driving voltage It is adva...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40
Inventor 王东兴
Owner DALIAN RAILWAY COLLEGE
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