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Organic vertical cavity laser element with organic active region

An active area, organic technology, applied in laser components, active area structure, laser, etc., can solve the problems of low carrier mobility, driving, etc., and achieve the effects of reduced output, improved operation, and increased power conversion rate

Inactive Publication Date: 2004-05-19
EASTMAN KODAK CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This result is very important for amorphous lasing systems, since it is currently impossible to drive them by electron injection, mainly due to the low carrier mobility of organic substances (N. Tessler et al., Appl. Phys. Lett. 74, 2764 , 1999)

Method used

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  • Organic vertical cavity laser element with organic active region
  • Organic vertical cavity laser element with organic active region
  • Organic vertical cavity laser element with organic active region

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0144] The solution ultraviolet (UV) absorption and fluorescence emission spectra of the materials identified useful dopants and host materials. Solution ultraviolet (UV) absorption spectra and fluorescence emission spectra of typical materials such as Figure 3-46 shown. All solution spectra were obtained with ethyl acetate solution except L59 (THF), L60 (water) and L62 (sucrose octaacetate).

[0145] The table lists the overlap of emission from the host material and absorption from the dopant. "X" indicates a host emission of at least 5% relative to a local maximum at a wavelength having dopant absorption of at least 5% relative to a local maximum. "0" means no (or less) overlap.

[0146] subject

[0147]Clearly, there are many combinations of host and dopant materials where the emission of the host material overlaps the absorption of the dopant material. As stated earlier, the material can be used both as a host material and as a dopant. As an example, the ...

Embodiment 2

[0149] To examine the spectral and power characteristics of the device, an organic vertical cavity laser structure 10 was deposited on a 4-inch silicon substrate. By conventional electron beam deposition, a bottom dielectric stack 30 is deposited on the substrate, consisting of low and high index SiO 2 and TiO 2 Layers are alternately formed. The peak reflectance of the bottom dielectric stack at 660 nm is approximately 99.95%. The active region 40 is deposited on top of the bottom dielectric stack by high vacuum thermal evaporation. The active region is composed of 190nm TAPC, 20nm Alq plus dopant and 188nm TAPC. In one example, the dopant is L39 at a concentration of 1%; and in another case, the dopant is L62 at a concentration of 0.5%. Deposited on the active region 40 is made of SiO 2 and TiO 2 The top dielectric stack 50 is composed of alternating layers, which results in a peak reflectance measured at 660 nm of 99.85%. The top dielectric stack was deposited by ele...

Embodiment 3

[0154] Active region doping

[0155] As can be seen from the table above, the device containing the L30 dopant produced the most intense lasing peak at 5KHz. In addition, the laser intensity has minimal effect with increasing the repetition rate of the pump beam at 5 MHz. In summary, L30 is more suitable as a dopant in lasers than typical pyromethene dopants, at least by the properties of lasers mentioned above.

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PUM

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Abstract

An organic vertical cavity laser light producing device includes a bottom dielectric stack reflective to light over a predetermined range of wavelengths; an organic active region for producing laser light, and having an organic active region including emissive material; and a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths. Pump-beam light is transmitted and introduced into the organic active region through at least one of the dielectric stacks. The organic active region includes one or more periodic gain region(s) and organic spacer layers disposed on either side of the periodic gain region(s) and arranged so that the periodic gain region(s) is aligned with the antinodes of the device's standing wave electromagnetic field, and wherein the spacer layers are substantially transparent to the laser light.

Description

technical field [0001] The invention relates to the field of light-emitting elements, and in particular, the invention relates to organic-based solid-state lasers. Background technique [0002] Vertical-cavity surface-emitting lasers (VCSELs) based on inorganic semiconductors such as AlGaAs have been extensively studied since the mid-80's (K. Kinoshita et al., IEEE J. Quant. Electron. QE-23, 882, 1987). Their achievement: AlGaAs-based VCSELs emitting at 850 nm have been manufactured by many companies and have a lifetime of more than 100 years (K.D. Choquette et al., Proc. IEEE85, 1730, 1997). Due to the success of research on near-infrared lasers in recent years, people have turned their attention to other inorganic material systems for the manufacture of VCSELs emitting in the visible wavelength range (C.Wilmsen et al., Vertical-Cavity Surface-Emitting Laser, Cambridge University Press, Cambridge, 2001). Currently, there are many fruitful applications for visible lasers, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06H01S3/05H01S3/091H01S3/16H01S5/04H01S5/183H01S5/36
CPCH01S5/041H01S5/36H01S5/18383H01S5/183
Inventor K·B·卡亨J·R·瓦加斯D·Y·康达科夫C·T·布朗L·科辛贝斯库V·V·亚里科夫
Owner EASTMAN KODAK CO
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