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Silicon seed crystal holder for monocrystal silicon by vertical pulling process

A technology for growing monocrystalline silicon and seed crystal clips, which is applied in the field of silicon seed crystal holders for growing monocrystalline silicon by the Czochralski method. Processing costs, avoiding breakage, and ensuring the effect of safe use

Inactive Publication Date: 2004-04-21
有研半导体硅材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the existing seed crystals and their clamping devices can no longer meet the requirements and are not safe, and the seed crystals are prone to breakage. In order to reduce this situation, generally only 1 to 5 seed crystals are used for each seed crystal. crystal growth, which increases manufacturing costs

Method used

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  • Silicon seed crystal holder for monocrystal silicon by vertical pulling process
  • Silicon seed crystal holder for monocrystal silicon by vertical pulling process
  • Silicon seed crystal holder for monocrystal silicon by vertical pulling process

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Effect test

Embodiment 1

[0038] Figure 4 Shown is a cross-sectional view of the silicon seed holder according to the present invention. The silicon seed crystal holder of the present invention includes a coupling member 13c connected with the seed crystal shaft 12, a holder upper part 13a and a holder lower part 13b which are integrally connected with the coupling member, and the holder lower part 13b is A cylindrical body with cavities penetrating through the upper part and the lower part, and the upper part 13a of the holder is a cylindrical body.

[0039] The upper part 13a of the holder and the lower part 13b of the holder are threadedly connected, the connecting piece 13c connecting the holder and the seed crystal shaft 12 is a pin connection, and the connecting piece 13c is a double-ear structure .

[0040] The cavity of the lower part 13b of the holder is a rounded table hole and a cylindrical hole, and the angle θ between the side of the rounded table hole and the shaft is 15°.

[0041] Figure ...

Embodiment 2

[0044] Figure 7 Shown is a cross-sectional view of the lower part 13b of another silicon seed holder of the present invention. The difference from Embodiment 1 is that the cavity in the lower portion 13b of the holder is a rounded platform.

Embodiment 3

[0046] Figure 8 Shown is another cross-sectional view of the lower part 13b of the silicon seed holder of the present invention. The difference from Embodiment 1 is that the cavity of the lower part 13b of the holder is two stepped cylindrical holes, and the hole diameter of the upper cylindrical hole is larger than the hole diameter of the lower cylindrical hole.

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Abstract

A clamper of silicon seel crystal for growing the monocrystalline silicon by straight pull method has a top jointer for connecting the seed crystal axle, and a main body which is composed of an upper part and a lower part containing a through empty cavity with big diameter for upper half and small diameter for lower half. It can be used to prepare the silicon crystal with 500 kg in weight. Its advantage is high safety of silicon seed crystal which can not be broken.

Description

Technical field [0001] The invention relates to a silicon seed crystal holder for growing single crystal silicon by Czochralski method. Background technique [0002] Silicon single crystal, as a semiconductor material, is generally used to manufacture integrated circuits and other electronic components. Most semiconductor silicon single crystals are manufactured by the Czochralski method. The cross-sectional diagram of a single crystal furnace for manufacturing silicon single crystals by the Czochralski method is attached. figure 1 . In the silicon single crystal growth method produced by the Czochralski method, the silicon crystal is grown in a growth chamber. The growth chamber includes a stainless steel cylinder 8, an insulating cylinder 7, a graphite heating element 6, a quartz crucible 11, a quartz crucible holder 10 made of graphite, etc. During the growth of silicon crystal, inert gas argon is used as a protective gas. The following manufacturing method is generally...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/32
Inventor 屠海令戴小林吴志强周旗钢张果虎万关良王学锋
Owner 有研半导体硅材料股份有限公司
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