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Filming method of substrate and filming appts.

A coating device and substrate technology, applied to electrical components, cells, electrolytic processes, etc., can solve problems such as reduced reliability, poor graphics, and deterioration of electromigration resistance

Inactive Publication Date: 2004-03-10
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] These defects, specifically dent defects 28 and hollows 29, etc., are once generated, for example, in the wiring portion composed of the plated film 27 buried in the insulating film 22, or in the contact portion composed of the plated film 27 buried in the hollow to reach the lower wiring. etc., it will cause a decrease in reliability such as deterioration of electromigration resistance.
However, when duplicating the pit 57 on other regions than the upper-layer wiring formation region of the second interlayer insulating film 56, due to the concave shape of the pit 57, a pattern may be generated in the lithography for forming the upper-layer wiring trench. bad

Method used

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  • Filming method of substrate and filming appts.
  • Filming method of substrate and filming appts.
  • Filming method of substrate and filming appts.

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Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0038] Hereinafter, a substrate coating method according to a first embodiment of the present invention will be described with reference to the drawings.

[0039] 1( a ) to ( e ) are cross-sectional views showing each step in the substrate coating method of the first embodiment. In addition, in FIG.1(a)-(e), the main surface of the board|substrate on which wiring etc. are formed is shown in the state facing down.

[0040] First, as shown in FIG. 1( a ), an interlayer insulating film 102 , a TaN barrier film 103 , and a Cu seed film 104 are sequentially deposited on a substrate 101 .

[0041] Then, as shown in FIG. 1( b ), the substrate 101 is clamped by a substrate clamping mechanism (not shown), and at the same time, the substrate 101 is immersed in the plating solution 106 face down by the mechanism. At this time, air bubbles 105 are adsorbed on the surface of the Cu seed film 104 on the surface to be plated. Here, the bubbles 105 are minute bubbles with a size of several ...

no. 2 Embodiment approach

[0059] Next, a substrate coating method according to a second embodiment of the present invention will be described with reference to the drawings.

[0060] Figure 4 (a) to (e) are sectional views showing each step in the substrate coating method according to the second embodiment of the present invention. Moreover, in Figure 4 In (a)-(e), the main surface of the board|substrate on which wiring etc. are formed is shown with the front facing down.

[0061] First, if Figure 4 As shown in (a), an interlayer insulating film 102 , a TaN barrier film 103 , and a Cu seed film 104 are sequentially deposited on a substrate 101 .

[0062] Then, in the present embodiment, while the substrate 101 is clamped by the substrate clamping mechanism (not shown) in a state facing downward, pure water is sprayed from the pure water nozzle 111 to the surface of the Cu seed film 104 on the surface to be plated. Stream 112.

[0063] However, as in the usual coating process, after the depositi...

no. 3 Embodiment approach

[0079] Next, a substrate coating method according to a third embodiment of the present invention will be described with reference to the drawings.

[0080] Figure 5 (a) to (e) are sectional views showing each step of the substrate coating method according to the third embodiment of the present invention. Moreover, in Figure 5 In (a)-(e), the main surface of the board|substrate on which wiring etc. are formed is shown with the front facing down.

[0081] First, if Figure 5 As shown in (a), an interlayer insulating film 102 , a TaN barrier film 103 , and a Cu seed film 104 are sequentially deposited on a substrate 101 . At this time, fine particles 115 of copper or the like generated during deposition of the Cu seed film 104 adhere to the surface of the Cu seed film 104 . When the substrate 101 is immersed in the plating solution with the particles 115 present on the surface of the Cu seed film 104 , bubbles with the particles 115 as nuclei are generated, resulting in def...

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Abstract

After bubbles adsorbed to a substrate are removed by rotating the substrate in a plating solution at a higher speed or after the wettability of the surface of the substrate to be plated is improved before the substrate is immersed in the plating solution, the substrate is rotated in the plating solution at a lower speed so that a plating process is performed with respect to the substrate.

Description

technical field [0001] The invention relates to a method for coating a substrate and an electroplating device, in particular to a technique for forming wiring and the like by using the electroplating method. Background technique [0002] Conventionally, aluminum has been mainly used as a wiring material of an LSI formed on a silicon semiconductor substrate. However, in recent years, with the high integration and high-speed assembly of semiconductor integrated circuits, copper, which has lower resistance than aluminum and high electromigration (EM) resistance, has attracted attention as a wiring material. In addition, as a method of forming a copper film, there is an electroplating method described in Patent Document 1. [0003] Hereinafter, a conventional substrate coating method using an electroplating method will be described with reference to the drawings. [0004] Figure 10 (a) to (c) are schematic diagrams showing each step of a conventional substrate coating method....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/00C25D7/12H01L21/288
CPCC25D21/04C25D21/00C25D7/123H01L21/2885
Inventor 平尾秀司
Owner PANASONIC CORP
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