Memory element and its production method

Abstract

The production method of storage element includes the following steps: firstly, defining semiconductor substrate with first dopant type, providing doped layer of second dopant type on the substrate, providing dielectric layer on the doped layer, forming plug in dielectric layer, doping the dopant of second dopant type in whole area of the plug, doping the dopant of first dopant type in plug of second dopant type and providing the storage unit on the plug.

Description

technical field [0001] The present invention relates to a semiconductor circuit element and a manufacturing method, and in particular to a semiconductor memory cell and a manufacturing method. Background technique [0002] Memory cells using electrically writable and erasable phase change substances are well known technologies, such as those disclosed in US Pat. In a typical memory cell structure, diodes with buried bit lines on the X-axis or Y-axis can be used to locate and isolate individual memory cells. The buried bit line is formed in the source or drain region of the memory cell, however, sometimes a huge depletion region exists in the buried bit line region, resulting in the occurrence of punchthrough phenomenon. [0003] The interface breakdown phenomenon is a collapse phenomenon, and when the reverse bias voltage on the drain increases, the drain depletion region will expand and cause this collapse phenomenon. The electric field on the reverse biased drain will pe...

AI Technical Summary

Problems solved by technology

The buried bit line is formed in the source or drain region of the memory cell, however, a huge depletion region sometimes exists in the buried bit line region, resulting in the occurrence of punchthrough phenomenon

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