Power amplifier

A power amplifier and terminal technology, used in power amplifiers, amplifiers, high-frequency amplifiers, etc., can solve the problems of amplifier amplitude distortion, the increase of collector current amplitude cannot maintain a proportional relationship, etc., to suppress gain compression and achieve thermal uniformity. Stable operation and low distortion operation, the effect of suppressing the increase of collector current

Inactive Publication Date: 2006-05-10
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, in the above conventional example, as the amplitude of the collector current increases, the increase in the base current increases the voltage drop across the resistors RB101 to RB10n, so the increase in the amplitude of the base current and the increase in the amplitude of the collector current cannot maintain a proportional relationship
This is so-called gain compression (ゲインコンプレツシヨン), which causes amplitude distortion in the amplifier

Method used

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no. 1 Embodiment approach

[0064] figure 1 A first embodiment of the power amplifier of the present invention is shown. The power amplifier Amp1 of the first embodiment includes a grounded emitter bipolar transistor Q1 having a base terminal B, a collector terminal Co, and a resistor RB connected between the base bias supply terminal VB and the base terminal B. . The collector terminal Co of the grounded emitter bipolar transistor Q1 is connected to the signal output terminal RFOUT.

[0065] Furthermore, the power amplifier Amp1 of the first embodiment includes a first impedance circuit Z1 having two terminals Pa1 and Pb1, the terminal Pa1 of the impedance circuit Z1 is connected to the signal input terminal RFIN, and the terminal Pb1 is connected to the base terminal. on child B. Furthermore, the first embodiment includes a second impedance circuit ZZ having a terminal Pa connected to the signal input terminal RFIN and a terminal Pb connected to the base bias supply terminal VB.

[0066] Here, bet...

no. 2 Embodiment approach

[0071] then, figure 2 A second embodiment of the power amplifier of the present invention is shown. This second embodiment is an example of an embodiment that is more specific and simpler than the aforementioned first embodiment, figure 1 The first impedance circuit Z1 is composed of a capacitor C1, and the second impedance circuit ZZ is composed of a capacitor Ca1.

[0072] According to this second embodiment, the first and second impedance circuits Z1 and ZZ that are open to DC and conduct to AC can be composed of simple elements such as capacitors C1 and Ca1, and heat can be realized at the same time as in the first embodiment. Stable work and low distortion work.

no. 3 Embodiment approach

[0074] then, image 3 The third embodiment of the present invention is shown. In this third embodiment, in the above-mentioned second embodiment, the series circuit in which the resistor Ra1 is connected in series to the capacitor Ca1 is used as the second impedance circuit. The first impedance circuit is constituted by a capacitor C1 as in the second embodiment.

[0075] According to the third embodiment, the AC component of the base current flowing through the resistor RB can be adjusted by the resistance value of the resistor Ra1 constituting the second impedance circuit. Therefore, according to the third embodiment, it is possible to suppress the gain compression of the power amplifier with high precision compared with the second embodiment.

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Abstract

Provides thermally stable operation and low distortion power amplifiers. In this power amplifier, both ends of the resistor (RB) connected between the base terminal (B) of the bipolar transistor (Q1) and the base bias voltage supply terminal (VB) are paired via the first and second The high-frequency components of the impedance circuit (Z1, ZZ) form a bypass. Therefore, a part of the AC component of the base current flowing from the base bias supply terminal (VB) to the resistor (RB) is distributed to the bypass. Therefore, the actual effect is that the increase of the voltage drop on the resistor (RB) can be suppressed, the gain compression can be suppressed, and the power amplifier can operate with low distortion. In addition, the impedance of at least one of the first and second impedance circuits (Z1, ZZ) is open to the DC component and conductive to the AC component, so the base current can be suppressed by the voltage drop across the resistor (RB) increases with increasing temperature.

Description

technical field [0001] The present invention relates to a power amplifier with low distortion and high thermal stability in operation used in high frequency bands such as mobile phones. Background technique [0002] Bipolar transistors are typified by GaAs heterojunction bipolar transistors, and are used in power amplifiers such as mobile phones. [0003] In addition, bipolar transistors are devices with thermal positive feedback characteristics. Heat generation increases the base and collector currents. Therefore, for thermal stability, a circuit that suppresses the increase in collector current with temperature rise is generally added. [0004] Also, when bipolar transistors are used in the transmission power amplifier, in order to increase the output power, generally, a plurality of bipolar transistors are connected in parallel to obtain a predetermined output power. In this case, due to the temperature inhomogeneity among the individual transistors, the current is conce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/00H03F1/08H03F3/20H03F1/32H03F3/19H03F3/24
Inventor 作野圭一
Owner MURATA MFG CO LTD
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