Method for preparing p-type Zn1-XMgXO crystal film

A zn1-xmgxo, p-type technology, applied in the field of p-type doped Zn1-xMgxO crystal thin film and its preparation, can solve the problems affecting the application of crystal thin film, and achieve the effect of high doping concentration

Inactive Publication Date: 2006-02-08
ZHEJIANG UNIV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, only intrinsically undoped Zn 1-x Mg x O thin film, no p-type Zn yet 1-x Mg x O crystal thin films, for intrinsically undoped Zn 1-x Mg x The preparation methods of O thin films mainly include: metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), etc. 1-x Mg x The p-type doping technology of O crystal thin film has not been solved, which affects the Zn 1-x Mg x Application of O Crystal Thin Films in Optoelectronic Devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing p-type Zn1-XMgXO crystal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0017] 1) Take ZnO, MgO and P with a purity of 99.99% 2 o 5 Powder, wherein the molar content of MgO is 20%, that is, the molar ratio of MgO:ZnO is 1:4, P 2 o 5 The molar content is 0.1%. Then ZnO, MgO and P 2 o 5 The powder is mixed and poured into an agate ball cup, and placed on a ball mill for ball milling. On the one hand, ZnO, MgO and P can be 2 o 5 The powder is mixed evenly to ensure the uniformity of the prepared target. On the other hand, ZnO, MgO and P 2 o 5 Powder refinement for subsequent ZnO, MgO and P 2 o 5 Forming and sintering of mixed powders. After the ball milling, add the binder polyvinyl acetate, and press the powder into a disc with a thickness of 3mm and a diameter of 4cm; then sinter the pressed powder disc at 500°C for 1 hour to form an organic bond. The agent evaporates, and the P-doped 2 o 5 Zn 0.8 Mg 0.2 O ceramic target.

[0018] 2) take the silicon chip as the substrate as an example, first clean the silicon chip with the RCA me...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A process for preparing the p-type Zn1-xMgxO crystal film includes providing high-purity ZnO, MgO and p-type dopant powder, proportional mixing, grinding, adding organic adhesive, die pressing, sintering to obtain p-type doped Zn1-xMgxO ceramic target, and using laser to irradiate the ceramic target in high-purity oxygen to grow th p-type Zn1-xMgxO crystal film on clean substrate.

Description

technical field [0001] The present invention relates to p-type doped Zn 1-x Mg x O crystal thin film and its preparation method. Background technique [0002] Zn 1-x Mg x O ternary alloy is a solid solution formed by ZnO and MgO according to a certain composition. In the application of ZnO-based light-emitting and optoelectronic devices, it is necessary to prepare p-Zn in order to improve the luminous efficiency of the device. 1-x Mg x O / ZnO / n-Zn 1-x Mg x O quantum well, superlattice structure, growth controllable n and p type Zn 1-x Mg x O crystal film. However, only intrinsically undoped Zn 1-x Mg x O thin film, no p-type Zn yet 1-x Mg x O crystal thin films, for intrinsically undoped Zn 1-x Mg x The preparation methods of O thin films mainly include: metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), etc. 1-x Mg x The p-type doping technology of O crystal thin film has ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B23/06
Inventor 黄靖云叶志镇张银珠赵炳辉
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap