Power semiconductor device transient thermosensitive voltage testing device

Abstract

The invention provides a transient thermosensitive voltage testing device for a power semiconductor device. The transient thermosensitive voltage testing device comprises a low-noise direct-current stabilized power supply, a testing condition generating circuit, a signal sampling and processing circuit and a main control and input / output circuit, the low-noise direct-current stabilized power supply provides stable direct-current voltage; the test condition generation circuit preheats the tested power semiconductor device, rapidly neutralizes minority carriers in the tested power semiconductor device, and generates a transient thermosensitive voltage difference after carrying out thermosensitive treatment; the signal sampling and processing circuit is used for collecting, amplifying and converting the transient thermosensitive voltage difference; and the master control and input / output circuit displays the transient thermosensitive voltage difference, and realizes the generation, amplitude and heating time of the heating current / thermosensitive current pulse required by the test condition generation circuit and the control of the neutralizing current pulse. The circuit has the advantages of being simple in circuit structure, easy to operate, small in interference caused by external environment changes, stable in waveform and the like.

Description

[0001] Yu Shouhao (ID card 45072120000922727X), Wei Wensheng, Song Huihui, Mo Yueda technical field [0002] The invention relates to the technical field of electronic measurement, in particular to a transient thermal voltage testing device for power semiconductor devices. Background technique [0003] In recent years, with the continuous development of the electronics industry and the wider application of semiconductors, it is more and more important to measure the transient thermal voltage of power semiconductor devices, and the performance requirements of power semiconductor devices are becoming more and more stringent. For power semiconductor devices, a certain amount of power is applied during operation, and most of this power is converted into heat, which leads to the temperature rise of the device chip. If the junction temperature of electronic devices is too high, failures such as device performance degradation, reliability degradation, and lifetime degradation will ...

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Problems solved by technology

Prevent the junction temperature rise of power semiconductor devices from overflowing, making the measured values ​​​​inaccurate (high)

Third, the test speed, accuracy and anti-interference requirements of thermal parameters (mainly the junction temperature after the heating power pulse) are very high. If the test speed is slow, it will also lead to a rapid drop in the junction temperature of the power semiconductor device, which will affect the temperature after the heating power pulse. The accuracy of the junction temperature test

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