Gate drive circuit

A gate drive circuit and power supply technology, which is applied in the direction of electronic switches, electrical components, output power conversion devices, etc., to achieve the effect of preventing through current

Pending Publication Date: 2022-06-10
TAMURA KK
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] On the other hand, the control circuit of the electric machine cannot directly supply such a large current to the large power switch

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gate drive circuit
  • Gate drive circuit
  • Gate drive circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0067] The present embodiment is a switching circuit used in a gate driving circuit that drives a power switch such as an IGBT or a MOSFET. figure 1 A circuit diagram of a gate drive circuit including the switching circuit 110 is shown in . This gate drive circuit is a gate drive circuit that drives the gate of IGBT15. Here, IGBT15 corresponds to a suitable example of the semiconductor switch of a claim. Moreover, the gate driving circuit mainly includes the switch circuit 110 and may include other circuits. For example, P-AMP16 may also be included (see figure 1 ), but may not be included depending on the application. Switching circuit 110 according to Embodiment 1 is characterized in that differential circuits 120 and 121 are connected to input terminals of high-side switch 111 and low-side switch 112 . These differentiating circuits 120, 121 produce the same effect as that of the case where the level shift circuit is inserted on the input side of the high-side switch ...

Embodiment approach 2

[0103] 2. Example using bipolar transistors in Embodiment 2

[0104] Figure 5 is a circuit block diagram of a gate drive circuit including the switch circuit 110 in which the high-side switch 111 a uses a pnp transistor and the low-side switch 112 a uses an npn transistor. Figure 5 In the gate driving circuit, the switch circuit 110 is also used as the main structure, but other structures may also be included. For example, the gate drive circuit may also include P-AMP16, but may not.

[0105] In the case of the use of so-called bipolar transistors, the same as explained heretofore figure 1 ~The circuit shown in Figure 3 has roughly the same effect. Also, for each switch of the high-side switch 111a, a transistor is used instead of a MOSFET, whereby various advantages can be produced.

[0106] Hereinafter, expressions related to the second embodiment in which transistors are used for the high-side switch 111 a and the low-side switch 112 a are added. The base-emitter ...

Embodiment approach 3

[0122] 3. Embodiment 3: Example using a Zener diode

[0123] Figure 6 It is a block diagram of a case where the Zener diode D1 is inserted into the output circuit of the switching circuit 110a. In a gate drive circuit that drives a power switch (IGBT15, etc.), the output of the switch circuit described in this embodiment and the gate drive circuit using the switch circuit is diversified. Figure 6 The gate drive circuit in 2000 has a switch circuit 110a as its main structure, but may also include other structures. For example, the gate drive circuit may or may not include P-AMP16.

[0124] For example, the output sometimes requires a swing from Vdc to Vee, and sometimes the voltage range must be limited like Vdc~GND. In this case, if Figure 6 As shown, by inserting a diode D1 between the transistor constituting the high-side switch 111 a or the low-side switch 112 a and the output terminal 114 , the swing of the output voltage can be adjusted.

[0125] For example, wh...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides a gate drive circuit which uses a simpler circuit, suppresses an increase in cost, and includes a higher-speed switching circuit. The gate drive circuit drives the semiconductor switch based on a control signal, and includes: an input terminal; a high-side switch connected to the positive-side power supply; a low-side switch connected to the negative-side power supply; a first differentiating circuit connected to the positive-side power supply, differentiating the control signal, and supplying the differentiated control signal to the high-side switch; a second differentiating circuit connected to the negative-side power supply, differentiating the control signal, and supplying the differentiated control signal to the low-side switch; an output terminal that outputs a signal for driving; a first impedance circuit connected between the high-side switch and the output terminal; and a second impedance circuit connected between the high-side switch and the output terminal.

Description

technical field [0001] The invention relates to a gate driving circuit for driving power switches such as insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT) or metal oxide semiconductor field effect transistors (Metal Oxide Semiconductor Field Effect Transistor, MOSFET). Background technique [0002] With the demand for energy saving in recent years, photovoltaic power generation and wind power generation are becoming more and more important in terms of energy supply. A gate drive circuit that drives a large power switch used in such an electric machine is used. [0003] Such a high-power switch requires high-speed (with nanosecond (nsec) level precision) on / off (ON / OFF). That is, regarding the switching frequency of electric equipment, there is a tendency to increase the frequency in view of the demands for achieving weight reduction, space saving, and low price. The power switches used in this situation also need to switch at high speed. [000...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/088H02M1/38
CPCH02M1/088H02M1/38H03K17/567H03K17/687H03K17/04
Inventor 小川纮生
Owner TAMURA KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap