LED chip and preparation method thereof

Abstract

The invention discloses an LED chip and a preparation method thereof, and the method comprises the steps: carrying out the at least partial etching of a lamination layer which is composed of at least an ohmic contact layer and a part of a first type semiconductor layer in a second electrode shielding region, and forming a groove, therefore, current flowing into the active layer of the second electrode shielding area from the ohmic contact layer of the second electrode shielding area and a part of the first type semiconductor layer can be reduced at least, that is, the current transversely expanded into the active layer of the second electrode shielding area is reduced, the light emission of the active layer of the second electrode shielding area is reduced, heat production is reduced, and the service life of the device is prolonged. The purposes of reducing the junction temperature and improving the electro-optical conversion efficiency of the LED chip are achieved, meanwhile, more current can be expanded to the active layer which is not shielded by the second electrode, and the electro-optical conversion efficiency of the LED chip is further improved.

Description

technical field [0001] The present application relates to the technical field of light-emitting diodes, and in particular, to an LED chip and a preparation method thereof. Background technique [0002] With the development of light-emitting diode (Light-Emitting Diode, LED) chip technology, the internal quantum efficiency of LEDs has reached a very high level, but the light extraction efficiency is still relatively low, which needs to be improved urgently. At present, high-brightness light-emitting LED chips usually use an omni-directional reflector (ODR), so as to improve the reflection efficiency of the reflector, thereby improving the light extraction efficiency. [0003] The omnidirectional mirror usually includes a semiconductor layer, a dielectric layer and a metal mirror layer, which are arranged on the P side of the LED chip. In order to ensure that the semiconductor layer and the metal mirror layer form ohmic contact, it is necessary to open holes in the dielectric ...

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Problems solved by technology

However, although it has been possible to design the openings on the dielectric layer to be staggered from the N electrodes, when the current passes through the epitaxial layer, because the epitaxial layer is conductive, part of the current will still spread laterally to the active layer below the N electrode to emit light, and this part of the light will be emitted. The N electrode blocks or absorbs, thereby generating heat and increasing the junction temperature, which reduces the electro-optical conversion efficiency of the LED chip

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