Reaction cavity inner surface protection device and epitaxial reaction monitoring device and method

Abstract

The invention relates to the field of semiconductor manufacturing, in particular to a reaction cavity inner surface protection device and an epitaxial reaction monitoring device and method.The reaction cavity inner surface protection device is used for protecting the inner surface of a reaction cavity of epitaxial equipment, and the reaction cavity inner surface protection device comprises graphite paper, a first rotating shaft and a second rotating shaft; the first rotating shaft and the second rotating shaft are mounted at the air inlet end and the air outlet end of the reaction cavity respectively, the first rotating shaft and the second rotating shaft are sleeved with the two ends of the graphite paper respectively, and the graphite paper is provided with a horizontal section at the inner top of the reaction cavity; the graphite paper can be horizontally conveyed on the inner top of the reaction cavity in the single direction under the rotation action of the first rotating shaft and the second rotating shaft, the protection device is arranged on the inner surface of the reaction cavity, the graphite paper continuously works to take away crystals on the graphite paper, the crystals are prevented from falling on a substrate, and the inner surface of the reaction cavity does not need to be frequently cleaned.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a reaction chamber inner surface protection device, an epitaxial reaction monitoring device and a method. Background technique [0002] In the epitaxial process, since the growth method of SiC is continuous multi-piece, during the epitaxial reaction process, the reaction chamber of the epitaxial equipment is continuously fed with the reaction gas. During the reaction process under the reaction conditions of 1700 ° C, the reaction gas may The inner surface of the chamber forms Si droplets or SiC particles on the surface, and the crystals fall on the substrate, causing defects on the substrate surface, which has a great impact on the yield of the substrate, so it is necessary to protect the inner surface of the reaction chamber Handle to prevent crystallization from falling on the substrate. [0003] The existing method for protecting the inner surface of the r...

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide a reaction chamber inner surface protection device, epitaxial reaction monitoring device and method, aiming to solve the problem that during the epitaxy process, the reaction gas introduced into the reaction chamber will generate crystals on the inner surface of the reaction chamber and fall on the surface of the reaction chamber. On the substrate, the problem that affects the yield of the substrate

Images