Bionic neuron memristor and preparation method thereof

A technology of neurons and memristors, applied in the field of bionic neurons, can solve the problems that robots do not have an emotional system and their responses are not as sensitive as living organisms

Pending Publication Date: 2022-05-13
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For the existing robot system, although it can complete part of the work like a human, it is still a product of the computer system, which is fundamentally different from the human system. Because of this, the robot does not have a perfect emotional system, and the reaction is not as good as Biologically sensitive

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  • Bionic neuron memristor and preparation method thereof
  • Bionic neuron memristor and preparation method thereof
  • Bionic neuron memristor and preparation method thereof

Examples

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Embodiment 1

[0040] This embodiment provides a bionic neuron memristor, such as figure 1 As shown, including a substrate, parallel electrodes and a dielectric layer; the parallel electrodes and the dielectric layer are all arranged on the substrate;

[0041] The parallel counter electrodes include a positive electrode layer and a negative electrode layer, and the medium layer is arranged between the positive electrode layer and the negative electrode layer;

[0042] The dielectric layer adopts a semiconductor material containing low activation energy ions in the crystal lattice;

[0043] There are two kinds of low activation energy ions in the lattice in the dielectric layer. Driven by the electric field, the two low activation energy ions are regulated by the electric field and move to the positive and negative poles respectively, which is used to simulate the sodium and potassium ions inside and outside the neuron membrane when stimulated. The process of membrane potential changes resul...

Embodiment 2

[0066] This embodiment provides a method for preparing a bionic neuron memristor, such as Figure 8 As shown, the method includes the steps of:

[0067] S1: Prepare a precursor solution, dissolve CsBr, BiBr3, and AgBr in dimethyl sulfoxide at a ratio of 2:1:1, heat and stir at 75°C for 4 hours, and prepare 10ml of a 0.4mol / mL transparent solution;

[0068] S2: Put the silicon wafer into acetone and alcohol respectively, ultrasonically clean it in deionized water for 10 hours, take it out and dry it with nitrogen;

[0069] S3: Spin-coat the cleaned silicon wafer with photoresist, expose the silicon wafer to ultraviolet light for 3s, and then put it into the developer solution for development for 45s;

[0070] S4: Put the developed silicon wafer into the electron beam evaporation deposition system for deposition, the pressure is below 1x10-5Pa, first deposit 5nm Ti electrode, and then deposit 80nm Au electrode;

[0071] S5: Place the deposited sheet in the glue-removing soluti...

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Abstract

The invention provides a bionic neuron memristor and a preparation method thereof, and relates to the technical field of bionic neurons, the bionic neuron memristor comprises a substrate, parallel counter electrodes and a dielectric layer; the parallel counter electrode and the dielectric layer are arranged on the substrate; the parallel counter electrode comprises a positive electrode layer and a negative electrode layer, and the dielectric layer is arranged between the positive electrode layer and the negative electrode layer; the dielectric layer is made of a semiconductor material of which crystal lattices contain low-activation-energy ions; two kinds of low-activation-energy ions exist in crystal lattices in the dielectric layer, are regulated and controlled by an electric field under driving of the electric field, move towards the positive electrode and the negative electrode respectively and are used for simulating the membrane potential change process generated by transportation change of sodium and potassium ions inside and outside a membrane when neurons are stimulated. According to the invention, simulation of neuron membrane potential change, neuron cumulative emission phenomenon and neuron refractory behavior can be realized without building a peripheral circuit.

Description

technical field [0001] The invention relates to the technical field of bionic neurons, in particular to a bionic neuron memristor and a preparation method thereof. Background technique [0002] At present, the research on bionic neurons is still in its infancy, and the simulation of neuron functions is also very mechanized, and more peripheral circuits need to be built to simulate functions. In 2018, Huang et al. used a device with W / WO3 / poly(3,4-ethylenedioxythiophene):polystyrenesulfonate / Pt structure to simulate the change of neuron membrane potential and the function of neuron cumulative emission through the migration of protons in the device. Morphological computing is instructive. However, the realization of the functions in this work requires the design of peripheral circuits, and the cost of realizing the functions is relatively high. However, the firing of electrical pulse signals in biological neurons is realized through the joint action of sodium ions and potass...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/841H10N70/881H10N70/011
Inventor 朱小健吴柳张峥孙启浩李润伟
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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