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Bias voltage connections in RF power amplifier packages

A technology of amplifier circuit and drain bias voltage, which is applied to power amplifiers, parts of amplifiers, amplifiers, etc., and can solve problems such as negative impact on performance

Active Publication Date: 2022-04-15
沃孚半导体公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

RF input and output leads are typically wider than other signal connections, and reducing their size has a negative impact on performance

Method used

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  • Bias voltage connections in RF power amplifier packages
  • Bias voltage connections in RF power amplifier packages
  • Bias voltage connections in RF power amplifier packages

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Embodiment Construction

[0037] The present invention may, of course, be carried out in other ways than those specifically set forth herein without departing from essential characteristics of the invention. The embodiments of the present invention are to be considered in all respects as illustrative and not restrictive, and all changes coming within the meaning and equivalency range of the appended claims are intended to be embraced therein.

[0038] For the purposes of simplicity and illustration, the present invention has been described primarily with reference to the exemplary embodiments of the invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one of ordinary skill in the art that the present invention may be practiced without being limited to these specific details. In this specification, well-known methods and structures have not been described in detail so as no...

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Abstract

When an RF power amplifier circuit is integrated on a package, at least one bias voltage is coupled to at least one amplifier circuit on the package via two or more pins / connectors. In particular, at least one of the gate and drain bias voltages is coupled to one or more amplifier circuits via at least two pins / connectors. In some embodiments, two or more bias voltage pins / connectors are connected together on a package, placing the pins / connectors in parallel, which reduces the inductance associated with the pins / connectors. In some embodiments, at least two pins / connectors connected to the same bias voltage are disposed on either side of the RF signal pin / conductor, simplifying routing of signals on the package, providing greater flexibility of placement and routing on the package.

Description

[0001] Related applications [0002] This application claims priority to US Patent Application Serial No. 16 / 414,955, filed May 17, 2019, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates generally to RF power amplifier circuits, and more particularly to systems and methods for providing bias voltages to amplifier circuits on a package by connecting two or more pins / connectors to the same bias voltage. Background technique [0004] Modern wireless communication networks are modulated to radio frequency (RF) signals by transmitting typically between fixed access points (called base stations, eNBs, gNBs, etc.) and a large number of mobile terminals (user equipment or UEs, tablets, laptops, etc.) on the voice and data content to operate. Signal transmission in both directions requires RF power amplifiers. In both cases, efficiency (output power divided by input power) is an important consideration. Effic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F1/56H03F3/21H03F3/213H01L23/66
CPCH01L23/66H01L2223/665H03F1/0288H03F2200/387H03F2200/222H03F2200/451H03F3/195H03F3/213H03F3/245H03F1/565H03F2200/267
Inventor M·基杜拉拉M·马贝尔S·沃德
Owner 沃孚半导体公司
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