High-overload-resistant silicon sensing unit, micro-accelerometer and preparation method of high-overload-resistant silicon sensing unit

A sensitive unit, high overload technology, applied in the direction of measurement of acceleration, velocity/acceleration/shock measurement, microstructure device composed of deformable elements, etc., can solve the problem that the anti-overload performance of the micro accelerometer needs to be improved, and achieve improvement The effect of anti-overload performance, compression of production cycle and cost, and reduction of processing difficulty

Pending Publication Date: 2022-04-15
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, in environments such as free fall, airborne equipment landing, maneuvering, and collisions, the anti-overload performance of micro-accelerometers still needs to be improved

Method used

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  • High-overload-resistant silicon sensing unit, micro-accelerometer and preparation method of high-overload-resistant silicon sensing unit
  • High-overload-resistant silicon sensing unit, micro-accelerometer and preparation method of high-overload-resistant silicon sensing unit
  • High-overload-resistant silicon sensing unit, micro-accelerometer and preparation method of high-overload-resistant silicon sensing unit

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] like Figure 1-3 Shown is an anti-high overload silicon sensor unit disclosed in this embodiment, which is mainly used in micro accelerometers. The sensitive unit includes an integrally formed outer frame 1 and a sensitive mechanism. The outer frame 1 is a square flat plate structure. The sensitive mechanism includes a composite beam structure and a mass assembly. The composite beam structure includes a beam stress release structure 201, a sensitive beam 202 and a displacement limiting beam. 203. The outer frame 1 has a hollow groove 101 , the hollow groove 101 is located in the middle area of ​​the outer frame 1 , and the beam stress relief structure 201 is located in the center of the hollow groove 101 . Among them, the middle positions of the left and right sides of the beam stress relief structure 201 are respectively connected to the outer frame 1 through the sensitive beam 202, and the middle positions of the upper and lower ends of the beam stress relief structu...

Embodiment 2

[0066] like Figure 11-12 Shown is a micro-accelerometer disclosed in this embodiment, which includes a glass substrate 4 and the anti-high overload sensitive unit in Embodiment 1. The glass substrate 4 is provided with electrically connected pins and electrode assemblies. The whole of the glass substrate 4 is a square plate structure, and its overall size is larger than that of the outer frame 1 . The upper surface of the glass substrate 4 has a relief groove 401 corresponding to the position of the electrode assembly, leaving a space for arranging the electrode assembly. And the upper surface of the glass substrate 4 has two "door"-shaped bonding bosses 402 symmetrically along the relief groove 401. When the glass substrate 4 is connected, the lower surface of the outer frame 1 is used as the anchor point area, and the bonding bosses The platform 402 and the anchor area are connected and fixed by anodic bonding, which is not only mature and simple, but also easy to operate ...

Embodiment 3

[0072] like Figure 13 Shown is that this embodiment also discloses a preparation method of the micro-accelerometer in Embodiment 2, which specifically includes the following steps:

[0073] Step 1, prepare a thick silicon wafer and carry out calibration, cleaning and drying, namely Figure 13 as shown in (a);

[0074] Step 2, use thick glue to spread the glue on the lower surface of the silicon wafer, and develop the photolithographic pattern of the groove 103 on the bottom surface after photolithography, that is Figure 13 As shown in (b); the bottom groove 103 is etched by dry etching process, and the etching depth is the processing thickness from the lower surface of the silicon wafer to the lower surface of the sensitive mechanism, and then the silicon wafer is degummed, cleaned and dried processing, ie Figure 13 as shown in (c);

[0075] Step 3, use thick glue to spread the glue on the upper surface of the silicon wafer, and develop the photolithographic pattern of ...

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Abstract

The invention discloses a high-overload-resistant silicon sensing unit, a micro-accelerometer and a preparation method of the high-overload-resistant silicon sensing unit. The silicon sensing unit comprises an outer frame, a composite beam structure and a mass block assembly, the composite beam structure comprises a beam stress releasing structure, sensitive beams and displacement limiting beams, the two sides of the beam stress releasing structure are connected with the outer frame through the sensitive beams, and the two ends of the beam stress releasing structure are connected with the outer frame through the displacement limiting beams. The two sensitive beams and the two displacement limiting beams are in a cross-shaped symmetrical structure by taking the beam stress release structure as the center and are positioned in the spaced hollow-out grooves of the mass block assembly; the outer frame comprises a buffer stop structure. The micro-accelerometer is applied to the technical field of silicon micro-sensors, the displacement limiting beam and the buffer stop structure are additionally arranged, and the displacement limiting beam can improve the rigidity of the sensitive beam and the rigidity of the whole sensitive unit when the micro-accelerometer is impacted under the condition that the working mode of the micro-accelerometer is not influenced; and the buffer stop structure on the outer frame can perform blocking and buffer protection when the mass block collides with the outer frame, so that the overload resistance of the micro accelerometer is improved.

Description

technical field [0001] The invention relates to the technical field of silicon microsensors, in particular to an anti-high overload silicon sensitive unit, a micro accelerometer and a preparation method thereof. Background technique [0002] The accelerometer is a sensor used for acceleration sensing. When the sensor is subjected to acceleration, the internal sensitive unit will feel the acceleration and deform. Through special detection means, the deformation proportional to the acceleration can be detected, so as to realize the acceleration detection. The micro-accelerometer is manufactured by micro-machining technology, and has the advantages of small size, low cost, and high performance. It is a key device for fault detection, attitude sensing, and health monitoring. It is widely used in civilian and military fields. [0003] At present, high-performance micro-accelerometers still rely on imports. According to reports, in terms of high-end equipment and equipment, such a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81C1/00G01P15/125
Inventor 侯占强吴学忠肖定邦李青松席翔张勇猛刘高单恒苗桐侨虢晓双王北镇
Owner NAT UNIV OF DEFENSE TECH
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