Semiconductor process chamber

Abstract

A semiconductor process chamber provided by the present invention comprises a cavity, a base and a gas guide structure, the gas guide structure comprises an upper gas guide part and a lower gas guide part, an upper gas guide cavity of the upper gas guide part is used for receiving gas from the periphery of the base, an annular opening is formed in the bottom of the upper gas guide part, and the bottom of the lower gas guide part is communicated with an exhaust port 601. A plurality of air guide through holes for communicating the upper air guide cavity with the lower air guide cavity of the lower air guide piece are formed in the top of the lower air guide piece, and a plurality of air guide assemblies in one-to-one correspondence with the air guide through holes are arranged in the lower air guide cavity; the gas guide assembly enables the minimum flow sectional area of gas flowing into the lower gas guide cavity from the upper gas guide cavity through the gas guide through hole to be reduced along with the increase of the pressure difference between the upper gas and the lower gas. In the invention, the upper gas guide cavity is connected with the lower gas guide cavity through the plurality of gas guide assemblies of which the opening degrees are reduced along with the increase of the pressure difference between the upper gas and the lower gas, so that the circumferential uniformity of a gas flow field above a wafer can be ensured under various working conditions, and the adaptability of the semiconductor process cavity is improved while the thickness uniformity of a film is improved.

Description

technical field [0001] The invention relates to the field of semiconductor process equipment, in particular to a semiconductor process chamber. Background technique [0002] With the rapid iterative update of integrated circuit technology, electronic components continue to develop in the direction of miniaturization, integration, and high performance, and the industry has also put forward higher requirements for thin film deposition technology. Traditional thin film deposition technologies such as physical vapor deposition (Physical Vapor Deposition, PVD) and chemical vapor deposition (Chemical Vapor Deposition, CVD) are becoming more and more difficult to meet the increasing process requirements, and atomic layer deposition (Atomic layer deposition, ALD) has become Hot development direction of thin film deposition technology. [0003] Atomic layer deposition technology is a thin film deposition technology that is adsorbed layer by layer on a wafer with a single atomic laye...

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Problems solved by technology

Similarly, the exhaust uniformity of the exhaust system will also have a significant impact on the thickness and uniformity of the film

[0004] In the existing atomic layer deposition equipment, due to the limitations of the chamber structure and hardware such as the heating base, the exhaust system is usually placed eccentrically, resulting in inconsistent exhaust pressure around the wafer, and the exhaust gas flow field along the circumference of the process chamber uneven distribution, which affects the thickness and uniformity of the film

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