Memory voltage test method, device, computing equipment and system

A technology of voltage testing and memory, applied in static memory, instruments, etc., can solve the problems of low voltage adjustment efficiency, cumbersome memory voltage test operation process, etc., and achieve the effect of complete coverage of voltage adjustment

Pending Publication Date: 2022-03-01
SUZHOU LANGCHAO INTELLIGENT TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the embodiments of the present invention provide a memory voltage testing method, device, computing device and system method, aiming to solve the problem of low voltage adjustment efficiency due to the cumbersome memory voltage test operation process and the need for additional debugging tools and software. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory voltage test method, device, computing equipment and system
  • Memory voltage test method, device, computing equipment and system
  • Memory voltage test method, device, computing equipment and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0054] It should be noted that the memory voltage test method provided in the embodiment of the present application may be executed by a memory voltage test device, and the memory voltage test device may be implemented as a computer device through software, hardware, or a combination of software and hardware. Part or all, wherein, the computer device may...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of computer equipment, in particular to a memory voltage testing method, device, computing equipment and system, which are applied to a BMC (Baseboard Management Controller), the BMC is connected with the memory equipment, the method comprises the following steps: acquiring a voltage adjusting instruction, the voltage adjusting instruction is used for indicating to adjust the output voltage in the memory equipment; acquiring a current state corresponding to the memory device; and adjusting the output voltage of the memory device according to the current state so as to test the memory device. According to the memory voltage testing method, the BMC obtains the voltage adjusting instruction and then adjusts the output voltage of the memory device, so that the operation of adjusting the output voltage of the memory device is reduced, no extra tool is needed, and the memory voltage testing efficiency is improved. In addition, the output voltage of the memory device in various states can be adjusted, and the test accuracy of the memory device can be improved.

Description

technical field [0001] The present invention relates to the field of computer equipment, in particular to a memory voltage testing method, device, computing equipment and system. Background technique [0002] With the rapid development of cloud computing and big data technology, the trend of informatization and intelligence in the current society is accelerating. As the core equipment of the information system, the server has higher and higher requirements for performance and reliability. Sufficient and rigorous testing should be carried out during server development to ensure product quality. Memory, as one of the important components, is the part that needs to be focused on during the testing process. [0003] The memory four-corner test is an important one among memory-related tests, including four conditions: high temperature and low pressure, high temperature and high pressure, low temperature and low pressure, and low temperature and high pressure. After putting the s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C29/56
CPCG11C29/56Y02D10/00
Inventor 肖时航
Owner SUZHOU LANGCHAO INTELLIGENT TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products