Memory adjusting method, adjusting system and semiconductor device

Abstract

The embodiment of the invention provides an adjusting method and an adjusting system of a memory and a semiconductor device. The adjusting method of the memory comprises the following steps: acquiring a mapping relation among the temperature of a transistor, the substrate bias voltage of a sensitive amplification transistor in a sensitive amplifier and the actual data writing time of the memory; acquiring the current temperature of the transistor; and adjusting the substrate bias voltage based on the current temperature and the mapping relation, so that the actual data writing time corresponding to the adjusted substrate bias voltage is within the preset writing time. As the temperature can influence the actual data writing time of the memory, firstly, the mapping relation among the temperature of a transistor, the substrate bias voltage of a sensitive amplification transistor in a sensitive amplifier and the actual data writing time is obtained, and the actual data writing time of the memory is obtained according to the current temperature of the transistor; the actual data write-in time of the memory of the transistor at the current temperature is adjusted by adjusting the substrate bias voltage of the sensitive amplification transistor in the sensitive amplifier.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a memory adjusting method, an adjusting system and a semiconductor device. Background technique [0002] As one of the three essential components of a computer, memory is one of the key devices that determine system performance. It is like a temporary warehouse, responsible for data transfer and temporary storage. [0003] The key performance index of the memory is the time for reading / writing data of the memory. The data writing of the memory is not written into the storage capacitor immediately, because the charging of the gate transistor and the capacitor must take a period of time, that is, the data writing of the memory needs a certain amount of time. In order to ensure the accuracy of data writing, sufficient data writing time will be reserved. [0004] However, the actual data writing time of the memory will be affected by the temperature, which will cause the actual data wr...

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Problems solved by technology

[0004] However, the actual data writing time of the memory will be affected by the temperature, which will cause the actual data writing time of the memory to be longer than the reserved enough data writing time, resulting in the data not being completely written to the storage capacitor

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