High-low voltage conversion circuit with low temperature coefficient and high power supply rejection ratio

A technology with high power supply rejection ratio and low temperature coefficient, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve problems such as complex circuit structure, consumption, unstable low-voltage power supply, etc., to simplify the circuit structure and reduce the number of chips The effect of area, good stability

Active Publication Date: 2022-01-14
成都启臣微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] These two methods have their disadvantages. The temperature coefficient of the first method is poor, the low-voltage power supply is unstable, and the power supply rejection ratio is poor. When the high-voltage part changes too much, it will have a great impact on the generated low-voltage part.
The s

Method used

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  • High-low voltage conversion circuit with low temperature coefficient and high power supply rejection ratio

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Experimental program
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Effect test

Embodiment 1

[0023] Embodiment 1: as figure 1 As shown, a high-voltage conversion circuit with a low temperature coefficient and a high power supply rejection ratio includes a non-op-amp bandgap reference circuit 101 and a high-voltage to low-voltage circuit 102; the non-op-amp bandgap reference circuit 101 and the high-voltage to low-voltage circuit 102 connect.

Embodiment 2

[0024] Embodiment 2: On the basis of Embodiment 1, the non-op-amp bandgap reference circuit 101 includes a first current generation unit, a low temperature coefficient bandgap reference voltage generation unit, a feedback voltage unit, and a second current generation unit; the first The current generation unit provides the first current to the entire non-op-amp bandgap reference circuit 101, the second current generation unit provides the second current to the bandgap reference voltage generation unit with low temperature coefficient, and the feedback voltage of the feedback voltage unit is sent to the high voltage to low voltage circuit 102.

Embodiment 3

[0025] Embodiment 3: On the basis of embodiment 2, the bandgap reference voltage generation unit of low temperature coefficient comprises NPN tube N1, NPN tube N2, resistor R1 and resistor R2; The emitter stage of NPN tube N1 and the lower end of resistor R1, resistor The upper end of R2 is connected; the emitter of NPN tube N2 is connected with the upper end of resistor R1; the lower end of resistor R2 is grounded.

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Abstract

The invention discloses a high-low voltage conversion circuit with a low temperature coefficient and a high power supply rejection ratio, and belongs to the field of integrated circuits. The circuit comprises an operational amplifier-free band-gap reference circuit and a high-voltage-to-low-voltage conversion circuit. The operational amplifier-free band-gap reference circuit is connected with the high-voltage-to-low-voltage circuit. Under the condition that component parameters are selected properly, the temperature drift effect of the circuit can be remarkably reduced, generated low voltage can stably supply power to a low-voltage part in the integrated circuit, the influence of temperature on the integrated circuit is reduced, and the working stability of the integrated circuit in high-temperature and low-temperature environments is greatly improved.

Description

technical field [0001] The invention relates to the field of integrated circuits, and more specifically relates to a high-voltage conversion circuit with low temperature coefficient and high power supply rejection ratio. Background technique [0002] In analog chips, multiple power supplies with different voltages are often required for the use of different types of MOS tubes inside. In such chips, high and low voltage power conversion circuits are usually designed separately. There are usually two types of traditional high and low voltage conversion circuits. The first is to use the voltage-regulating characteristics of the Zener tube to stabilize the low-voltage power supply. The second is to use a high-voltage MOS tube to build a bandgap reference circuit, and then use the LDO structure to realize high-voltage and low-voltage conversion. [0003] These two methods have their disadvantages. The temperature coefficient of the first method is poor, the low-voltage power s...

Claims

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Application Information

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IPC IPC(8): G05F1/567
CPCG05F1/567Y02B70/10
Inventor 不公告发明人
Owner 成都启臣微电子股份有限公司
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