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High-linearity broadband millimeter wave low-noise amplifier

A low-noise amplifier and high-linearity technology, which is applied in low-noise amplifiers, high-frequency amplifiers, amplifiers, etc., can solve problems that cannot meet the high linearity and broadband requirements of 5G millimeter wave communication systems, and achieve flat gain response, small Die area effect

Pending Publication Date: 2022-01-07
TIANJIN UNIV +1
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Therefore, the traditional LNA linearization technology can no longer meet the high linearity and broadband requirements of the current 5G mmWave communication system

Method used

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  • High-linearity broadband millimeter wave low-noise amplifier

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Embodiment Construction

[0017] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0018] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0019] Those skilled in the art can understand the specific meanings of the above terms in this application according to specific situations.

[0020] Such as figure 1 As shown, this embodiment discloses a high-linearity broadband millimeter-wave low-noise amplifier, which includes an input matching network, a first-stage amplifying circuit unit A1, an inter-stage matching network, a second-stage amplifying circuit unit A2, and an output There are five modules in the matching network, and the five modules are co...

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Abstract

The invention discloses a high-linearity broadband millimeter wave low-noise amplifier, which comprises five modules, namely an input matching network, a first-stage amplifying circuit unit, an inter-stage matching network, a second-stage amplifying circuit unit and an output matching network which are connected in sequence, a signal enters from the input end of the input matching network and is output from the output end of the output matching network. The beneficial effects of the invention are that: (1) the inter-stage matching and the output matching employ the transformer matching, so that flat gain response and small chip area in a wide frequency range can be realized; (2) the second-stage amplification circuit unit adopts a fully differential structure, even harmonics in output signals of the amplifier are counteracted, and the IIP2 index and the IP1dB index of the amplifier are improved at the same time; and (3) the second-stage amplifying circuit unit adopts a third-order transconductance counteracting technology, so that the IIP3 index is improved.

Description

technical field [0001] The invention belongs to the technical field of radio frequency, microwave and millimeter-wave integrated circuits, and in particular relates to a high-linearity millimeter-wave low-noise amplifier. Background technique [0002] As the first active circuit module in the communication receiver system, the low noise amplifier's noise figure characteristics determine the receiver's noise performance, and its linearity characteristics determine the receiver's sensitivity and dynamic range. The 5G millimeter-wave communication system needs to achieve a multi-gigabit rate, so higher requirements are placed on the linearity and bandwidth of the millimeter-wave low-noise amplifier. [0003] The linearity characteristic of the low noise amplifier is mainly measured by the index input 1dB compression point IP1dB, the input second-order intermodulation point IIP2 and the input third-order intermodulation point IIP3. The traditional linearization technology is ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/56H03F3/189H03F3/45
CPCH03F1/26H03F1/56H03F3/189H03F3/4508H03F2200/451H03F2200/294
Inventor 刘兵马凯学傅海鹏陆敏刘新阳
Owner TIANJIN UNIV
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