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Memory and electronic equipment

A memory and storage block technology, which is applied to parts, circuits, electrical components, etc. of electromagnetic equipment, can solve the problems of electromagnetic field interference and low anti-electromagnetic interference ability, achieve low production difficulty, improve anti-electromagnetic ability, and better anti-electromagnetic The effect of the electromagnetic effect

Pending Publication Date: 2021-12-31
VIVO MOBILE COMM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application aims to provide a memory and an electronic device, which at least solves the problem that the storage block in the existing memory has a low anti-electromagnetic interference ability and is easily disturbed by the electromagnetic field of the surrounding environment

Method used

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  • Memory and electronic equipment
  • Memory and electronic equipment
  • Memory and electronic equipment

Examples

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Embodiment Construction

[0027] Embodiments of the present application will be described in detail below, examples of which are shown in the drawings, in which the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary, and are only for explaining the present application, and should not be construed as limiting the present application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0028] The features of the terms "first" and "second" in the description and claims of the present application may explicitly or implicitly include one or more of these features. In the description of the present application, unless otherwise specified, "plurality" means two or more. In addition, "and / or" in the specification ...

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Abstract

The embodiment of the invention discloses a memory and electronic equipment. The memory comprises a first metal layer, a memory block, a peripheral part and a last metal layer cover plate. A first electromagnetic shielding structure is formed on the first metal layer; the storage block is arranged on the first metal layer, and the first electromagnetic shielding structure is arranged around the storage block; the peripheral part surrounds the edge of the first metal layer, a second electromagnetic shielding structure is formed on the peripheral part, and a plurality of via holes are formed in the second electromagnetic shielding structure; the last metal layer cover plate covers the peripheral part, and a third electromagnetic shielding structure is formed on the last metal layer cover plate; the first electromagnetic shielding structure, the second electromagnetic shielding structure and the third electromagnetic shielding structure can be enclosed to form an electromagnetic shielding space, and the storage block is accommodated in the electromagnetic shielding space. According to the embodiment of the invention, a scheme for preventing electromagnetic interference and other magnetic interference is provided for the memory, the electromagnetic influence in the external environment can be effectively shielded, and the memory has a better anti-electromagnetic effect.

Description

technical field [0001] The present application belongs to the technical field of electronic products, and in particular relates to a memory and electronic equipment. Background technique [0002] The development of the microprocessor (Microcontroller unit, MCU) has reached below 28nm so far. Because of the high integration, it is difficult to use the previous electronic storage mode for data storage. In recent years, a new storage solution has been proposed in the industry, that is, magnetic random access memory (MRAM), which has the characteristics of high integration, low power consumption, and fast read and write speed. [0003] Since the development of microprocessors, front-end floating gate / electronic capture and other modes have been unable to adapt to 22nm and below processes due to the limitation of integration. At 22nm and below, there are currently two modes: variable magnetoresistive random access memory (MRAM) and variable resistive random access memory (ReRAM)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/552H01L43/02H01L43/08G11B33/14H10N50/10H10N50/80
CPCH01L23/552G11B33/1493H10N50/80H10N50/10
Inventor 付延超
Owner VIVO MOBILE COMM CO LTD
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