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Epitaxial structure based on Nano-LED application, chip and preparation method

An epitaxial structure and epitaxy technology, applied in electrical components, circuits, semiconductor devices, etc., to avoid high manufacturing costs and difficult to promote, easy to produce, and high luminous efficiency.

Active Publication Date: 2021-12-24
XIAMEN QIANZHAO SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide an epitaxial structure, chip and preparation method based on Nano-LED application, to solve the technical problem of realizing the separation of nanoscale LED chips on the LED epitaxial structure

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  • Epitaxial structure based on Nano-LED application, chip and preparation method
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  • Epitaxial structure based on Nano-LED application, chip and preparation method

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Embodiment Construction

[0045] In order to make the content of the present invention clearer, the content of the present invention will be further described below in conjunction with the accompanying drawings. The invention is not limited to this specific example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0046] An epitaxial structure based on Nano-LED applications, as shown in the figure, figure 2 , image 3 shown, including:

[0047] A patterned substrate 1, the patterned substrate 1 includes a plurality of protrusions 1.1 separated from each other by spacers 1.2 and distributed in an array, and grooves 1.3 are formed between the protrusions 1.1 and the corresponding spacers 1.2;

[0048] A plurality of epitaxial stacks formed in the groove 1.3 and covering the surface of each protrusion 1.1 and isolated from each other by isola...

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Abstract

The invention provides an epitaxial structure based on Nano-LED application, a chip and a preparation method, a patterned substrate comprises a plurality of protrusions which are mutually isolated through isolation columns and are distributed in an array, and grooves are formed between the protrusions and the corresponding isolation columns; and the epitaxial laminated layers are formed in the grooves, cover the surfaces of the bulges and are isolated from one another through the isolation columns. Therefore, based on the patterned substrate formed by a plurality of bulges which are mutually isolated by the isolation columns and are distributed in an array, a plurality of mutually isolated epitaxial laminated layers can be formed on the surfaces of the bulges, namely, each protrusion forms an independent light-emitting unit; therefore, the stress release of the epitaxial material of the light-emitting unit can be well realized, the high-quality epitaxial material is obtained, and the Nano-LED chip under low current has high light-emitting efficiency.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to an epitaxial structure, chip and preparation method based on Nano-LED applications. Background technique [0002] LED, the abbreviation of Light Emitting Diode, is translated as light emitting diode. Like ordinary diodes, LEDs have PN junctions. For LEDs with InGaN / GaN quantum well structure, when a forward voltage is applied to both ends, the holes injected from the P region to move to the N region and the electrons injected from the N region to move to the P region meet at the quantum well structure And composite light. GaN-based LED-based lighting products have gradually replaced incandescent and fluorescent lamps and become a new generation of lighting sources. LED has the characteristics of energy saving, environmental protection, long life and high luminous efficiency. The typical size of LED chips is on the order of millimeters. By further shrinking LED chips, hund...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/08H01L33/32H01L33/50H01L33/00
CPCH01L33/08H01L33/32H01L33/502H01L33/0075
Inventor 林志伟陈凯轩蔡建九曲晓东赵斌
Owner XIAMEN QIANZHAO SEMICON TECH CO LTD
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